Lattice location of O 18 in ion implanted Fe crystals by Rutherford backscattering spectrometry, channeling and nuclear reaction analysis

Author(s):  
Mathayan Vairavel ◽  
Balakrishnan Sundaravel ◽  
Binaykumar Panigrahi
2006 ◽  
Vol 16 (03n04) ◽  
pp. 231-237
Author(s):  
TAKUYA NEBIKI ◽  
TADASHI NARUSAWA ◽  
AKIKO KUMAGAI ◽  
HIDEYUKI DOI ◽  
TADASHI SAITO ◽  
...  

We have investigated the nitrogen lattice location in MOVPE grown Ga 1- x In x N y As 1- y with x = 0.07 and y = 0.025 by means of ion beam channeling technique. In this system, the lattice constant of the Ga 1- x In x N y As 1- y film is equal to GaAs lattice. Therefore, we can grow apparently no strain, high quality and very thick GaInNAs film on GaAs substrate. The quality of the films as well as the lattice location of In and N were characterized by channeling Rutherford backscattering spectrometry and nuclear reaction analysis using 3.95 MeV He 2+ beam. The fraction of substitutional nitrogen in the film was measured using the 14 N (α, p )17 O endothermic nuclear reaction. Our results indicate that more than 90% of In and N atoms are located the substitutional site, however, N atoms are slightly displaced by ~0.2 Å from the lattice site. We suggest that the GaInNAs film has a local strain or point defects around the N atoms.


1997 ◽  
Vol 75 (11) ◽  
pp. 1759-1765 ◽  
Author(s):  
A. De Battisti ◽  
G. Lodi ◽  
L. Nanni ◽  
G. Battaglin ◽  
A. Benedetti

In this paper are presented data on the preparation and characterization of different oxide electrodes. RuO2–TiO2, IrO2–TiO2, and SnO2–Sb2O5 mixed-oxide films have been taken as model systems. For the first, the traditional preparation method based on the pyrolysis of precursor salt deposits was adopted. For the SnO2-based films, the spray pyrolysis preparation has been used. The characterization of RuO2–TiO2 films confirms the existence of a solid solution between the two component oxides over a wide composition range. Rutherford backscattering spectrometry confirms the occurrence of segregation of titanium oxide species in the outermost part of the films. Nuclear reaction analysis indicates that large amounts of carbon and hydrogen impurities are trapped in the oxide films. SnO2-based films were found to be less porous and chemically more simple. The differences between the two systems have been discussed in terms of the preparation method and the differences in chemical properties of the precursors. Keywords: oxide film electrodes, mixed-oxide films, Rutherford backscattering spectrometry, nuclear reaction analysis.


2008 ◽  
Author(s):  
John Kennedy ◽  
Peter Murmu ◽  
Andreas Markwitz ◽  
Edmund G. Seebauer ◽  
Susan B. Felch ◽  
...  

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