Channelling study on the lattice location of hydrogen in metals utilizing a nuclear reaction

ABSTRACTThe channeling technique has been used to study the lattice location of deuterium ion-implanted into silicon. Compared to earlier measurements by Picraux and Vook, the temperature range has been extended from 30 to 500 K, and the dose has been decreased down to ≃ 8 × 1014 D/cm2. The implantation was performed at 30 K gnd at an energy of 10 keV. The channeling analysis was done using the d(3 He,p)4 He nuclear reaction. Angular scans were measured along the <100>, <110>, <111> axis and the {100}, {110}, {111} planes, Experiments were carried out on the implanted sample (30K) and after annealing to 200 and 500 K. In the as-implanted sample, 80% of the deuterium is located close to the bond center, whereas the remaining 20% is placed at the tetrahedral site. The deuterium sites change after annealing to 200 and 50OK, and the nature of these annealings stages will be discussed.

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Channelling experiments on the lattice location of hydrogen in metals using the nuclear reaction1H(11B, α)αα

Radiation Effects and Defects in Solids ◽

10.1080/10420159208219824 ◽

1992 ◽

Vol 124 (1) ◽

pp. 21-29 ◽

Cited By ~ 6

Author(s):

Eiichi Yagi

Keyword(s):

Lattice Location ◽

Hydrogen In Metals

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Lattice Location of Ta in Ni3Ai by Ion Channeling and Nuclear Reaction Analysis

MRS Proceedings ◽

10.1557/proc-81-165 ◽

1986 ◽

Vol 81 ◽

Cited By ~ 2

Author(s):

H. Lin ◽

L. E. Sehberling ◽

P. F. Lyman ◽

D. P. Pope

Keyword(s):

Nuclear Reaction ◽

Ternary Phase Diagram ◽

Liquid Scintillator ◽

Ion Beam ◽

Lattice Location ◽

Nuclear Reaction Analysis ◽

Surface Barrier ◽

Crystallographic Axis ◽

Ion Channeling ◽

Barrier Detector

AbstractWe have investigated the lattice location of Ta in Ni3Al using Rutherford backscattering with channeling, and nuclear reaction analysis. An 8 MeV 4He ion beam was directed along the < 100> crystallographic axis of the Ni75Al24Ta single crystal. A silicon surface barrier detector was used to analyze 4He ions backscattered from Ni and Ta atoms. Neutrons generated from Al by the 27Al(4He,n)30P reaction were detected by a large volume liquid scintillator placed outside of the scattering chamber. Essentially all of the Ta atoms were found to be substitutional, as determined by the Ta channeling minimum yield. A comparison of the width of the channeling angular scan for Al, Ni and Ta indicated that the Ta atoms are predominantly distributed on the Ni sites. This result is in conflict with expectations based on the ternary phase diagram.

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Lattice location study on hydrogen in metals by means of a channelling method

Radiation Effects and Defects in Solids ◽

10.1080/10420159108220622 ◽

1991 ◽

Vol 117 (1-3) ◽

pp. 251-252

Author(s):

Eiichi Yagi

Keyword(s):

Lattice Location ◽

Hydrogen In Metals ◽

Location Study

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NITROGEN LATTICE LOCATION IN MOVPE GROWN Ga1-xInxNyAs1-y FILMS USING ION BEAM CHANNELING

International Journal of PIXE ◽

10.1142/s0129083506001003 ◽

2006 ◽

Vol 16 (03n04) ◽

pp. 231-237

Author(s):

TAKUYA NEBIKI ◽

TADASHI NARUSAWA ◽

AKIKO KUMAGAI ◽

HIDEYUKI DOI ◽

TADASHI SAITO ◽

...

Keyword(s):

Nuclear Reaction ◽

Gaas Substrate ◽

Lattice Site ◽

Rutherford Backscattering Spectrometry ◽

Ion Beam ◽

Local Strain ◽

Lattice Location ◽

Nuclear Reaction Analysis ◽

Substitutional Site

We have investigated the nitrogen lattice location in MOVPE grown Ga 1- x In x N y As 1- y with x = 0.07 and y = 0.025 by means of ion beam channeling technique. In this system, the lattice constant of the Ga 1- x In x N y As 1- y film is equal to GaAs lattice. Therefore, we can grow apparently no strain, high quality and very thick GaInNAs film on GaAs substrate. The quality of the films as well as the lattice location of In and N were characterized by channeling Rutherford backscattering spectrometry and nuclear reaction analysis using 3.95 MeV He 2+ beam. The fraction of substitutional nitrogen in the film was measured using the 14 N (α, p )17 O endothermic nuclear reaction. Our results indicate that more than 90% of In and N atoms are located the substitutional site, however, N atoms are slightly displaced by ~0.2 Å from the lattice site. We suggest that the GaInNAs film has a local strain or point defects around the N atoms.

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