Photoluminescence Measurements in Interband Transition in Fast Neutron Irradiated In0.07Ga0.93As/A10.4Ga0.6 As Multiple Quantum Wells

1999 ◽  
Vol 607 ◽  
Author(s):  
M. O. Manasreh ◽  
S. Subramanian
Keyword(s):  
Quantum Wells ◽  
Fast Neutron ◽  
Irradiation Dose ◽  
Interband Transition ◽  
Peak Position ◽  
Multiple Quantum Wells ◽  
Fast Neutrons ◽  
Multiple Quantum ◽  
Interband Transitions ◽  
Many Body

AbstractInterband transitions in n-type InGaAs/AlGaAs multiple quantum wells were studied using a photoluminescence (PL) technique after the samples were irradiated with fast neutrons. It was observed that the PL intensity of the interband transition is reduced as the irradiation dose is increased. In Addition, the peak position energy of the interband transition was increased and then decreased as a function of irradiation dose. The results are explained in terms of electrons trapping, many-body effects, and irradiation-induced damages at the interfaces as well as in the well and barrier regions.

Radiative recombination processes of the many-body states in multiple quantum wells

1990 ◽  
Vol 42 (5) ◽  
pp. 2893-2903 ◽  
Author(s):  
R. Cingolani ◽  
K. Ploog ◽  
A. Cingolani ◽  
C. Moro ◽  
M. Ferrara
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Many Body ◽  
Recombination Processes ◽  
The Many

Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation‐doped heterojunctions

1985 ◽  
Vol 46 (10) ◽  
pp. 970-972 ◽  
Author(s):  
O. J. Glembocki ◽  
B. V. Shanabrook ◽  
N. Bottka ◽  
W. T. Beard ◽  
J. Comas
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Interband Transitions

Interband transitions in InAsxP1−x/InP strained multiple quantum wells

1992 ◽  
Vol 72 (4) ◽  
pp. 1645-1647 ◽  
Author(s):  
S. J. Hwang ◽  
W. Shan ◽  
J. J. Song ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Interband Transitions

Intersubband Transitions In Ingaas/Inalas Multiple Quantum Wells Grown On Inp Substrate

2001 ◽  
Vol 692 ◽  
Author(s):  
Qiaoying Zhou ◽  
M. O. Manasreh ◽  
B. D. Weaver ◽  
M. Missous
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Interband Transitions ◽  
Intersubband Transitions ◽  
Quantum Well Structures ◽  
Inp Substrate ◽  
Inp Substrates ◽  
Lattice Matched

AbstractIntersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on lattice matched InP substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells. Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 Å. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.

Lineshape Analysis of Intersubband Transitions in Multiple Quantum Wells

1995 ◽  
Vol 406 ◽  
Author(s):  
G. Gumbs
Keyword(s):  
Absorption Spectrum ◽  
Quantum Wells ◽  
Exchange Interaction ◽  
Phonon Scattering ◽  
Peak Position ◽  
Absorption Peak ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transitions ◽  
Electron Effective Mass

AbstractConduction intersubband transitions between the ground and first excited states in Al0.3Ga0.7As/GaAs multiple quantum wells (MQWs) are studied as a function of the twodimensional electron gas density (0.75 × 1012 ≤ σ ≤ 3.75 × 1012 cm−2) and temperature (5 ≤ T ≤ 300 K). There is no electron tunneling between the wells and well regions are uniformly doped with silicon donors. Theoretically, we have solved the Schrödinger equation containing the self-consistent Hartree potential, in which the z-dependencies of both electron effective mass and dielectric constant, as well as the non-parabolicity in the conduction energy subband dispersion have been taken into consideration. By applying many-body theory which includes the depolarization-shift from a collective dipole moment and the excitonicshift from the negative exchange interaction, we calculate the absorption spectrum as a function of the incident photon energy hw for different values of T and σ. From this, we can quantitatively analyze both T- and σ-dependencies of the peak position and the full width at half-maximum (FWHM) of peak values. The blue-shift or red-shift in the absorption peak position are quantitatively reproduced as either T or σ is reduced. The exchange interaction which depends on σ, will modify the energy subband dispersion. Therefore, the absorption peak will be broadened by the exchange interaction. The T-dependence of broadening from the optical-phonon scattering is also taken into account by a phenomenological model. From the calculated absorption spectrum as a function of o, we have successfully reproduced and explained the σ-dependence of FWHM measured in recent experiments.

Sign in / Sign up

Export Citation Format

Share Document