A Study of Non-Infrared-Active Hydrogen Bonding in a-Si:H Thin Film using combined Calibrated Temperature Desorption Spectroscopy and FTIR

2000 ◽  
Vol 609 ◽  
Author(s):  
DJ. Santjojo ◽  
J.C.L. Cornish ◽  
M.O.G. Talukder
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hydrogen Bonding ◽  
Hydrogenated Amorphous Silicon ◽  
Active Hydrogen ◽  
Linear Temperature ◽  
Silicon Thin Films ◽  
Temperature Ramp ◽  
Hydrogenated Amorphous ◽  
Hydrogen Effusion

ABSTRACTNon-infrared-active hydrogen bonding species were investigated by analyzing the infrared spectra and the calibrated temperature desorption spectroscopy (CTDS) spectra of hydrogen released during degassing of hydrogenated amorphous silicon thin films. Samples were degassed gradually using a linear temperature ramp (0.5°C/s). Each stage corresponds to a temperature at which the hydrogen effusion peaks can be found (~ 340°C, ~ 500°C and ~ 610°C). Differences in the amounts of hydrogen obtained from the FTIR spectra and the CTDS measurement correspond to the non-infrared-active, occluded hydrogen.

Influence of Laser Annealing on Hydrogen Bonding in Disordered Silicon Thin Films

2003 ◽  
Vol 762 ◽  
Author(s):  
N. H. Nickel ◽  
K. Brendel
Keyword(s):  
Thin Films ◽  
Hydrogen Bonding ◽  
Low Temperatures ◽  
Deposition Temperature ◽  
Laser Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous ◽  
Hydrogen Effusion

AbstractThe influence of laser dehydrogenation and crystallization of hydrogenated amorphous silicon (a-Si:H) on H bonding is investigated. Depending on the deposition temperature the amorphous starting material contains a H concentration of up to 44 at.%. Laser crystallization lowers the H content significantly. Fully crystallized poly-Si contains H concentrations of up to 17 at.%. This reservoir of hydrogen can be used to passivate additional grain boundary defects by annealing the specimens at low temperatures in vacuum. Information on hydrogen bonding is obtained from hydrogen effusion measurements.

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