Genesis of Defects in Massively Transformed L10-ordered τ-MnAl Alloys
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ABSTRACTDefects produced in massively transformed L10-ordered τ-MnAl have been characterized by detailed TEM studies. The defect population in massive τ-MnAl comprises arrays of overlapping stacking faults, {111}-conjugated microtwins, thermal antiphase boundaries and dislocations. The genesis of these defects has been attributed to atomic attachment faulting on {111}- and {020}-type facets of the essentially incoherent growth interface between the parent and product phases. The features of the defect genesis in τ-MnAl are discussed with respect to the role of atomic level processes at solid-state transformation interfaces in general and growth interfaces in massively transforming materials systems in particular.
2006 ◽
Vol 110
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pp. 4054-4057
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Vol 120
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pp. 570-587
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2006 ◽
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pp. 4337-4341
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2019 ◽
Vol 278
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pp. 99-104
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