Electric Field Induced Heating and Energy Relaxation in GaN
Keyword(s):
AbstractWe report results of an investigation of electric field induced heating at low temperature in GaN 3-dimensional electron gas films grown on sapphire substrates. The excess noise of the electron gas in a patterned GaN film, while the substrate is held at low temperature, is used to determine the electron temperature. We calculate the rate of power dissipation and compare our results with a calculation of acoustic deformation potential scattering processes in GaN. We discuss the existence of a thermal boundary resistance between the GaN film and the sapphire substrate.
1971 ◽
Vol 27
(21)
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pp. 1434-1435
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2019 ◽
Vol 13
(5)
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pp. 1800551
1986 ◽
Vol 33
(5)
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pp. 572-575
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1993 ◽
Vol 07
(15)
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pp. 1021-1027
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