The Effects of Copper on the Interfacial Failure of Gold Films

2001 ◽  
Vol 695 ◽  
Author(s):  
N. R. Moody ◽  
D. P. Adams ◽  
M. J. Cordill ◽  
N. Yang ◽  
D. F. Bahr

ABSTRACTNanoindentation test techniques were combined with deposition of highly stressed overlayers to study the interfacial fracture susceptibility of gold-on-copper and gold-2w/o-copper alloy films. The gold-on-copper film blistered readily following deposition of stressed tungsten overlayers. Additional stress from nanoindentation was required to trigger delamination and blister formation in the gold-copper alloy film. Fracture energies were then determined using mechanics-based models. The results show that the gold-copper alloy exhibited higher fracture energies than the gold-on-copper films. This increase scaled with film strength suggesting that the higher measured fracture energies in the gold-copper alloy film were due to solid solution hardening.

Author(s):  
Stuart A. Maloy

MoSi2 has recently been investigated as a potential material for high temperature structural applications. It has excellent oxidation resistance up to 1700°C, a high melting temperature, 2030°C, and a brittle-to-ductile transition temperature at 900-1000°C. WSi2 is isomorphous with MoSi2 and has a body-centered tetragonal unit cell of the space group 14/mmm. The lattice parameters are a=3.20 Å and c=7.84 Å for MoSi2 and a=3.21 Å and c=7.88 Å for WSi2. Therefore, WSi2 was added to MoSi2 to improve its strength via solid solution hardening. The purpose of this study was to investigate the slip systems in polycrystalline MoSi2/WSi2 alloys.


2009 ◽  
Vol 51 (8) ◽  
pp. 1822-1827 ◽  
Author(s):  
Xiang Gao ◽  
Junlei Tang ◽  
Yu Zuo ◽  
Yuming Tang ◽  
Jinping Xiong

2001 ◽  
Vol 44 (6) ◽  
pp. 879-884 ◽  
Author(s):  
A.A Sharif ◽  
A Misra ◽  
J.J Petrovic ◽  
T.E Mitchell

1997 ◽  
Vol 12 (11) ◽  
pp. 3174-3181 ◽  
Author(s):  
Jae-Won Park ◽  
Anthony J. Pedraza ◽  
Douglas H. Lowndes ◽  
William R. Allen

Strong adhesion between a deposited copper film and an alumina substrate takes place when the substrate is laser-irradiated prior to deposition. A post-deposition annealing is required to achieve the strong bonding. In this work, the interfacial region between the copper film and the alumina substrate was analyzed using Auger Electron Spectroscopy (AES). It was found that a transitional region is always present in couples that have a high adhesion strength, while little or no transitional region was found in weakly bonded couples. The transitional region depends on the laser irradiation atmosphere. In the case of laser irradiation in air, oxygen excess was found on the surface of the alumina substrate, and in the copper/alumina couple the transitional region consists of a copper oxide and a Cu–Al double oxide. When the laser irradiation was performed in a reducing atmosphere (Ar–4% H2), substoichiometric alumina and metallic aluminum were found on the surface of the substrate and also a reaction between copper and the substoichiometric aluminum oxide was detected in the subsurface. Although the substoichiometric alumina is formed on the surface irradiated in Ar–4% H2, a stable Al2O3 thin layer is formed on the outmost surface because the irradiated substrate is exposed to the atmosphere before deposition. This reoxidized layer remains whole at the interface of the couple upon low temperature (at least up to 300 °C) annealing, while it is ruptured upon higher temperature annealing (500 °C in this work). In the latter case, the copper film can contact and react with the substoichiometric alumina formed in the subsurface of the substrate irradiated in the Ar–4% H2 atmosphere. It is concluded that the Cu–Al–O interfacial compound formed in the transitional region causes the strong adhesion between the copper film and the alumina substrate.


2001 ◽  
Vol 695 ◽  
Author(s):  
Y.-L. Shen ◽  
U. Ramamurty

ABSTRACTThe constitutive behavior of passivated copper films is studied. Stresses in copper films of thickness ranging from 1000 nm to 40 nm, passivated with silicon oxide on a quartz or silicon substrate, were measured using the curvature method. The thermal cycling spans a temperature range from - 196 to 600°C. It is seen that the strong relaxation at high temperatures normally found in unpassivated films is nonexistent for passivated films. The copper film did not show any rate-dependent effect over a range of heating/cooling rate from 5 to 25°C/min. Further analyses showed that significant strain hardening exists during the course of thermal loading. In particular, the measured stress- temperature response can only be fitted with a kinematic hardening model, if a simple constitutive law within the continuum plasticity framework is to be used. The analytic procedures for extracting the film properties are presented. Implications to stress modeling of copper interconnects in actual devices are discussed.


1980 ◽  
Vol 15 (1) ◽  
pp. 253-254 ◽  
Author(s):  
M. Z. Butt ◽  
P. Feltham

2017 ◽  
pp. 259-299 ◽  
Author(s):  
Tetsuo Mohri ◽  
Tomoo Suzuki *

1993 ◽  
Vol 57 (3) ◽  
pp. 356-361 ◽  
Author(s):  
Yi Tan ◽  
Tetsumori Shinoda ◽  
Yoshinao Mishima ◽  
Tomoo Suzuki

1999 ◽  
Vol 564 ◽  
Author(s):  
J. P. Lokker ◽  
R. S. A. van Winden ◽  
A. M. Janssen ◽  
S. Radelaar

AbstractThis paper reports on the influence of the copper concentration on the mechanical behaviour during thermal cycling and during isothermal holds of Al-Cu thin films on Si substrates. The Cu concentration has been varied in the range between 0 to 1 at.%Upon heating, the films with the larger amount of Cu showed a clear maximum in compressive stress. Moreover, during cooling these samples show a tensile stress increase at the onset precipitation temperature. Further cooling below 200 °C leads to the characteristic tensile stress increase often observed for Al-Cu thin films. An isothermal hold during cooling at 250 °C leads to temporary strengthening of all Al-Cu. The extent of the strengthening is dependent on the Cu concentration and is clearly dependent on the duration of the isothermal hold. Upon further cooling the strengthening disappears and the stress develops according to the original stress temperature dependence. The observations are discussed in terms of solid solution hardening and precipitation hardening.


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