Heteroepitaxial Growth of a Wide Gap P-type Oxysulfide, LaCuOS

2002 ◽  
Vol 747 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
Hideo Hosono

ABSTRACTEpitaxial films of LaCuOS, a wide gap p-type semiconductor, were grown on yittria- stabi-lized-zirconia (YSZ) (001) or MgO (001) substrates by a reactive solid phase epitaxy (R-SPE) method. Crystal quality, electrical and optical properties on the epitaxial films on each substrate are examined in this paper. Achievement of the heteroepitaxial growth of LaCuOS on the MgO (001) substrate improves optical properties of LaCuOS such as spectral bandwidths and emission intensity, suggesting that the MgO (001) substrate is more preferable than the YSZ (001) for epitaxial growth substrate for LaCuOS.

2004 ◽  
Vol 4 (2) ◽  
pp. 301-307 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Hiromichi Ohta ◽  
Toshiyuki Suzuki ◽  
Chizuru Honjo ◽  
Yuichi Ikuhara ◽  
...  

2004 ◽  
Vol 79 (4-6) ◽  
pp. 1517-1520 ◽  
Author(s):  
H. Hiramatsu ◽  
K. Ueda ◽  
K. Takafuji ◽  
H. Ohta ◽  
M. Hirano ◽  
...  

2002 ◽  
Vol 81 (4) ◽  
pp. 598-600 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
...  

RSC Advances ◽  
2014 ◽  
Vol 4 (78) ◽  
pp. 41294-41300 ◽  
Author(s):  
Y. S. Zou ◽  
H. P. Wang ◽  
S. L. Zhang ◽  
D. Lou ◽  
Y. H. Dong ◽  
...  

P-type Mg doped CuAlO2 films with high crystallinity are prepared by pulsed laser deposition followed by annealing, and exhibit enhanced conductivity and tunable optical band gaps.


2009 ◽  
Vol 95 (26) ◽  
pp. 261904 ◽  
Author(s):  
B. N. Pantha ◽  
A. Sedhain ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang

2011 ◽  
Vol 110 (12) ◽  
pp. 123707 ◽  
Author(s):  
Marie A. Mayer ◽  
Soojeong Choi ◽  
Oliver Bierwagen ◽  
Holland M. Smith ◽  
Eugene E. Haller ◽  
...  

2006 ◽  
Vol 99 (1) ◽  
pp. 013512 ◽  
Author(s):  
Lihua Bai ◽  
Chunchuan Xu ◽  
N. C. Giles ◽  
K. Nagashio ◽  
R. S. Feigelson

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