Liquid Phase Epitaxial Growth of Fe-Doped Semi-Insulating Inp and Ternary Alloys

1986 ◽  
Vol 77 ◽  
Author(s):  
S. Isozumi ◽  
T. Tanahashi ◽  
M. Kondo ◽  
M. Sugawara ◽  
A. Yamaguchi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
Distribution Coefficients ◽  
Ternary Alloys ◽  
Fe Doping ◽  
Temperature Dependent ◽  
Liquid Phase Epitaxial ◽  
Liquid Phase Epitaxial Growth ◽  
First Time

ABSTRACTFe-doped semi-insul ati ng layers of InP, In0.48A10.52As,and In0.49Ga0.51P have been grown by liquid phase epitaxy for the first time. Behaviors of Fe doping in these materials have been well explained by the solubility of Fe in the growth solution and the temperature dependent distribution coefficients of Fe. It has been found that the distribution coefficients of Fe in the ternary alloys are much greater than those in InP.

Liquid Phase Epitaxial Growth of Semi-Insulating Aigalnas by Fe Doping

1987 ◽  
Vol 102 ◽  
Author(s):  
T. Tanahashi ◽  
S. Okuda ◽  
M. Kondo ◽  
M. Sugawara ◽  
S. Isozumi ◽  
...  
Keyword(s):  
Activation Energy ◽  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
High Resistivity ◽  
Acceptor Level ◽  
Fe Doping ◽  
Liquid Phase Epitaxial ◽  
High Iron ◽  
Liquid Phase Epitaxial Growth

ABSTRACTFe-doped semi-insulating AlGalnAs grown by liquid phase epitaxy has been studied and compared to Fe-doped GalnAsP. It has been found that semiinsulating AlGalnAs is easier to obtain than semi-insulating GalnAsP, because of its high iron distribution coeficient. The high resistivity of 1×109 ohm-cm has been obtained for Al0.481n0.52 As grown at 750°C. The activation energy of the Fe acceptor level in the AlGalnAs system has also been studied.

Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

2017 ◽  
Vol 53 (46) ◽  
pp. 6191-6194 ◽  
Author(s):  
Valeriya Chernikova ◽  
Osama Shekhah ◽  
Ioannis Spanopoulos ◽  
Pantelis N. Trikalitis ◽  
Mohamed Eddaoudi
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
Liquid Phase Epitaxial ◽  
Growth Method ◽  
Liquid Phase Epitaxial Growth ◽  
Bold Type

Through combining the supermolecular building layer (SBL) approach for designing MOFs with the liquid phase epitaxy growth method, we demonstrate that it is possible to precisely control the epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures.

LIQUID PHASE EPITAXIAL GROWTH OF InxGa1-xAs/ InP NEAR SOLID INSTABILITY

1982 ◽  
Vol 43 (C5) ◽  
pp. C5-3-C5-10 ◽  
Author(s):  
M. C. Joncour ◽  
J. L. Benchimol ◽  
J. Burgeat ◽  
M. Quillec
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxial ◽  
Liquid Phase Epitaxial Growth

Liquid phase epitaxial growth of GaxIn1−xP

1972 ◽  
Vol 1 (4) ◽  
pp. 437-457 ◽  
Author(s):  
G. B. Stringfellow ◽  
P. F. Lindquist ◽  
R. A. Burmeister
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxial ◽  
Liquid Phase Epitaxial Growth

Current controlled liquid phase epitaxial growth and characterization of InGaAsP

1984 ◽  
Vol 70 (1-2) ◽  
pp. 162-168 ◽  
Author(s):  
S. Iyer ◽  
E.K. Stefanakos ◽  
A. Abul-Fadl ◽  
W.J. Collis
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxial ◽  
Liquid Phase Epitaxial Growth
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