Photoluminescent coupled multiple microcavity structures made of porous silicon

2004 ◽  
Vol 832 ◽  
Author(s):  
V. Agarwal ◽  
J.A. Soto Urueta ◽  
J. Miguel Gracia

ABSTRACTIn this paper we report the fabrication and experimental characterization of photoluminescent coupled multiple microcavity 1-Dimensional photonic bandgap structures for specific photonic applications. These structures have been prepared on silicon substrate as well as free standing. The comparision with theory gave a good fit showing desired structure formation for more than 184 layered structure. These structures can be useful for a large variety of applications such as silicon lasers.

2006 ◽  
Vol 20 (01) ◽  
pp. 99-110 ◽  
Author(s):  
V. AGARWAL ◽  
J. A. DEL RÍO

In this paper we report the detailed fabrication and experimental characterization of porous silicon one-dimensional photonic bandgap structures for specific photonic applications. These structures have been prepared on silicon substrate as well as free standing and can be proven useful for a large variety of applications such as high quality dielectric mirrors and filters.


2004 ◽  
Vol 451-452 ◽  
pp. 649-654 ◽  
Author(s):  
C.S. Solanki ◽  
R.R. Bilyalov ◽  
J. Poortmans ◽  
G. Beaucarne ◽  
K. Van Nieuwenhuysen ◽  
...  

1998 ◽  
Vol 14 (07) ◽  
pp. 577-580
Author(s):  
Xu Dong-Sheng ◽  
◽  
Guo Guo-Lin ◽  
Gui Lin-Lin ◽  
Zhang Bo-Rui ◽  
...  

2005 ◽  
Vol 22 (5) ◽  
pp. 1191-1194 ◽  
Author(s):  
Zhang Yong-Gang ◽  
Jiang Xun-Ya ◽  
Zhu Cheng ◽  
Gu Yi ◽  
Li Ai-Zhen ◽  
...  

2000 ◽  
Vol 638 ◽  
Author(s):  
Herman A. Lopez ◽  
J. Eduardo Lugo ◽  
Selena Chan ◽  
Sharon M. Weiss ◽  
Christopher C. Striemer ◽  
...  

AbstractControl over the 1.5 µm emission from erbium is desirable for communication and computational technologies because the erbium emission falls in the window of maximum transmission for silica based fiber optics. Tunable, narrow, directional, and enhanced erbium emission from silicon based 1-D photonic bandgap structures will be demonstrated. The structures are prepared by anodic etching of crystalline silicon and consist of two highly reflecting Bragg reflectors sandwiching an active layer. The cavities are doped by electro-migrating the erbium ions into the porous silicon matrix, followed by high temperature oxidation. By controlling the oxidation temperature, porosity, and thickness of the structure, the position of the erbium emission is tuned to emit in regions where the normal erbium emission is very weak. The erbium emission from the cavity is narrowed to a full width at half maximum (FWHM) of 12 nm with a cavity quality factor Q of 130, highly directional with a 20 degree emission cone around the normal axis, and enhanced by more than one order of magnitude when compared to its lateral emission. Erbium photoluminescence (PL) from porous silicon 2-D photonic bandgap structures is also demonstrated.


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