From Atomistic to Continuum Descriptions of Morphological Evolution

2004 ◽  
Vol 859 ◽  
Author(s):  
Christoph A. Haselwandter ◽  
Dimitri D. Vvedensky
Keyword(s):  
Monte Carlo ◽  
Continuum Limit ◽  
Growth Models ◽  
Kinetic Monte Carlo ◽  
Morphological Evolution ◽  
Strain Relaxation ◽  
Direct Analysis ◽  
Langevin Equations ◽  
Kinetic Monte Carlo Simulations ◽  
The Continuum

ABSTRACTLattice Langevin equations are derived from the rules of lattice growth models. These provide an exact mathematical description that is suitable for direct analysis, such as the passage to the continuum limit, as well as a computational alternative to kinetic Monte Carlo simulations. This approach is applied to ballistic deposition and a model for conditional deposition, both of which yield the Kardar–Parisi– Zhang equation in the continuum limit, and a model of strain relaxation during heteroepitaxy.

Kinetic Monte Carlo (KMC) Simulation of GaAs (001) β2 (2x4) Reconstructed Surface and Characterization

2010 ◽  
Vol 297-301 ◽  
pp. 308-317 ◽  
Author(s):  
Hamid Khachab ◽  
Yamani Abdelkafi ◽  
Abderrahmane Belghachi
Keyword(s):  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Morphological Evolution ◽  
High Energy ◽  
Zinc Blend ◽  
Homoepitaxial Growth ◽  
Initial Stage ◽  
Kinetic Monte Carlo Simulations ◽  
Reconstructed Surface

Several methods have been introduced to study and simulate homoepitaxial growth of III-V materials. GaAs (001) surface has widely been used in the last three decades due both to its importance as substrate and for characterization of epitaxial growth. In this paper, we firstly study the initial stage of homoepitaxial growth on a GaAs (001) β2(2x4) reconstructed surface using As2 . The simulation was carried out with Kinetic Monte Carlo simulations including the zinc blend structure β2 (2x4) reconstruction of GaAs surface. Then we discus results of the homoepitaxy GaAs on GaAs particularly morphological evolution of the two dimensional islands and observations were made in real-time at the growth temperature using reflection high energy electron diffraction (RHEED) and roughness morphology.

GROWTH MECHANISM OF RING SHAPED NANOSTRUCTURES SELF-ASSEMBLY UPON DROPLET EPITAXY

2012 ◽  
Vol 19 (03) ◽  
pp. 1250029 ◽  
Author(s):  
X. TAN ◽  
J. X. ZHONG ◽  
G. W. YANG
Keyword(s):  
Monte Carlo ◽  
Self Assembly ◽  
Kinetic Monte Carlo ◽  
Morphological Evolution ◽  
Diffusion Barriers ◽  
The Self ◽  
Droplet Epitaxy ◽  
Enhanced Diffusion ◽  
Theoretical Predictions ◽  
Kinetic Monte Carlo Simulations

A quantitatively kinetic model has been established to address the self-assembly of the ring shaped nanostructures upon the droplet epitaxy via kinetic Monte Carlo simulations. The theoretical predictions about the temperature and As flux dependences of the self-assembly of the ring shaped nanostructures were in well agreement with recent experiments. It was found that the morphological evolution of the ring shaped nanostructures was attributed to the cooperation of the enhanced diffusion barriers of free Ga atoms in the inner ring region and the effects of the surface reconstruction around the Ga droplets during the arsenization step.

Kinetic Monte Carlo Simulation of Impurity Effects on Nucleation and Growth of SiC Clusters on Si(100)

2013 ◽  
Vol 740-742 ◽  
pp. 393-396
Author(s):  
Maxim N. Lubov ◽  
Jörg Pezoldt ◽  
Yuri V. Trushin
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Cluster Size ◽  
Kinetic Monte Carlo ◽  
Nucleation And Growth ◽  
Nucleation Density ◽  
Nucleation Process ◽  
Impurity Effects ◽  
Kinetic Monte Carlo Simulations ◽  
The Mean

The influence of attractive and repulsive impurities on the nucleation process of the SiC clusters on Si(100) surface was investigated. Kinetic Monte Carlo simulations of the SiC clusters growth show that that increase of the impurity concentration (both attractive and repulsive) leads to decrease of the mean cluster size and rise of the nucleation density of the clusters.

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