GROWTH MECHANISM OF RING SHAPED NANOSTRUCTURES SELF-ASSEMBLY UPON DROPLET EPITAXY

2012 ◽  
Vol 19 (03) ◽  
pp. 1250029 ◽  
Author(s):  
X. TAN ◽  
J. X. ZHONG ◽  
G. W. YANG
Keyword(s):  
Monte Carlo ◽  
Self Assembly ◽  
Kinetic Monte Carlo ◽  
Morphological Evolution ◽  
Diffusion Barriers ◽  
The Self ◽  
Droplet Epitaxy ◽  
Enhanced Diffusion ◽  
Theoretical Predictions ◽  
Kinetic Monte Carlo Simulations

A quantitatively kinetic model has been established to address the self-assembly of the ring shaped nanostructures upon the droplet epitaxy via kinetic Monte Carlo simulations. The theoretical predictions about the temperature and As flux dependences of the self-assembly of the ring shaped nanostructures were in well agreement with recent experiments. It was found that the morphological evolution of the ring shaped nanostructures was attributed to the cooperation of the enhanced diffusion barriers of free Ga atoms in the inner ring region and the effects of the surface reconstruction around the Ga droplets during the arsenization step.

Deriving molecular bonding from a macromolecular self-assembly using kinetic Monte Carlo simulations

2008 ◽  
Vol 77 (20) ◽  
Author(s):  
Fabien Silly ◽  
Ulrich K. Weber ◽  
Adam Q. Shaw ◽  
Victor M. Burlakov ◽  
Martin R. Castell ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Self Assembly ◽  
Kinetic Monte Carlo ◽  
Kinetic Monte Carlo Simulations ◽  
Molecular Bonding

Kinetic Monte Carlo (KMC) Simulation of GaAs (001) β2 (2x4) Reconstructed Surface and Characterization

2010 ◽  
Vol 297-301 ◽  
pp. 308-317 ◽  
Author(s):  
Hamid Khachab ◽  
Yamani Abdelkafi ◽  
Abderrahmane Belghachi
Keyword(s):  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Morphological Evolution ◽  
High Energy ◽  
Zinc Blend ◽  
Homoepitaxial Growth ◽  
Initial Stage ◽  
Kinetic Monte Carlo Simulations ◽  
Reconstructed Surface

Several methods have been introduced to study and simulate homoepitaxial growth of III-V materials. GaAs (001) surface has widely been used in the last three decades due both to its importance as substrate and for characterization of epitaxial growth. In this paper, we firstly study the initial stage of homoepitaxial growth on a GaAs (001) β2(2x4) reconstructed surface using As2 . The simulation was carried out with Kinetic Monte Carlo simulations including the zinc blend structure β2 (2x4) reconstruction of GaAs surface. Then we discus results of the homoepitaxy GaAs on GaAs particularly morphological evolution of the two dimensional islands and observations were made in real-time at the growth temperature using reflection high energy electron diffraction (RHEED) and roughness morphology.

From Atomistic to Continuum Descriptions of Morphological Evolution

2004 ◽  
Vol 859 ◽  
Author(s):  
Christoph A. Haselwandter ◽  
Dimitri D. Vvedensky
Keyword(s):  
Monte Carlo ◽  
Continuum Limit ◽  
Growth Models ◽  
Kinetic Monte Carlo ◽  
Morphological Evolution ◽  
Strain Relaxation ◽  
Direct Analysis ◽  
Langevin Equations ◽  
Kinetic Monte Carlo Simulations ◽  
The Continuum

ABSTRACTLattice Langevin equations are derived from the rules of lattice growth models. These provide an exact mathematical description that is suitable for direct analysis, such as the passage to the continuum limit, as well as a computational alternative to kinetic Monte Carlo simulations. This approach is applied to ballistic deposition and a model for conditional deposition, both of which yield the Kardar–Parisi– Zhang equation in the continuum limit, and a model of strain relaxation during heteroepitaxy.

Kinetic Monte Carlo Simulations of Self-organization of Ge Islands on Si(001)

2021 ◽  
Author(s):  
Paramita Ghosh ◽  
Nidhi Gupta ◽  
Monika Dhankhar ◽  
Madhav Ranganathan
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Kinetic Monte Carlo ◽  
The Self ◽  
Self Organization ◽  
Kinetic Monte Carlo Simulation ◽  
Kinetic Monte Carlo Simulations

The self-organization of germanium islands on a silicon (001) substrate is studied using a lattice--based kinetic Monte Carlo simulation. These islands form spontaneously via Stranski-Krastanov mode during growth. The interplay...

Growth of vertically aligned nanowires in metal–oxide nanocomposites: kinetic Monte-Carlo modeling versus experiments

Nanoscale ◽  
2018 ◽  
Vol 10 (16) ◽  
pp. 7666-7675 ◽  
Author(s):  
M. Hennes ◽  
V. Schuler ◽  
X. Weng ◽  
J. Buchwald ◽  
D. Demaille ◽  
...  
Keyword(s):  
Thin Films ◽  
Monte Carlo ◽  
Metal Oxide ◽  
Self Assembly ◽  
Kinetic Monte Carlo ◽  
The Self ◽  
Metallic Nanowires ◽  
Monte Carlo Modeling ◽  
Monte Carlo Approach ◽  
Vertically Aligned

We developed a kinetic Monte-Carlo approach to model the self-assembly of ultrathin metallic nanowires during the growth of hybrid Ni–SrTiO3 thin films.

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