Kinetic Monte Carlo (KMC) Simulation of GaAs (001) β2 (2x4) Reconstructed Surface and Characterization

2010 ◽  
Vol 297-301 ◽  
pp. 308-317 ◽  
Author(s):  
Hamid Khachab ◽  
Yamani Abdelkafi ◽  
Abderrahmane Belghachi
Keyword(s):  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Morphological Evolution ◽  
High Energy ◽  
Zinc Blend ◽  
Homoepitaxial Growth ◽  
Initial Stage ◽  
Kinetic Monte Carlo Simulations ◽  
Reconstructed Surface

Several methods have been introduced to study and simulate homoepitaxial growth of III-V materials. GaAs (001) surface has widely been used in the last three decades due both to its importance as substrate and for characterization of epitaxial growth. In this paper, we firstly study the initial stage of homoepitaxial growth on a GaAs (001) β2(2x4) reconstructed surface using As2 . The simulation was carried out with Kinetic Monte Carlo simulations including the zinc blend structure β2 (2x4) reconstruction of GaAs surface. Then we discus results of the homoepitaxy GaAs on GaAs particularly morphological evolution of the two dimensional islands and observations were made in real-time at the growth temperature using reflection high energy electron diffraction (RHEED) and roughness morphology.

From Atomistic to Continuum Descriptions of Morphological Evolution

2004 ◽  
Vol 859 ◽  
Author(s):  
Christoph A. Haselwandter ◽  
Dimitri D. Vvedensky
Keyword(s):  
Monte Carlo ◽  
Continuum Limit ◽  
Growth Models ◽  
Kinetic Monte Carlo ◽  
Morphological Evolution ◽  
Strain Relaxation ◽  
Direct Analysis ◽  
Langevin Equations ◽  
Kinetic Monte Carlo Simulations ◽  
The Continuum

ABSTRACTLattice Langevin equations are derived from the rules of lattice growth models. These provide an exact mathematical description that is suitable for direct analysis, such as the passage to the continuum limit, as well as a computational alternative to kinetic Monte Carlo simulations. This approach is applied to ballistic deposition and a model for conditional deposition, both of which yield the Kardar–Parisi– Zhang equation in the continuum limit, and a model of strain relaxation during heteroepitaxy.

Scaling and Coarsening in Epitaxial Growth

1998 ◽  
Vol 528 ◽  
Author(s):  
Fereydoon Family ◽  
Jacques G. Amar
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Deposition Rate ◽  
Kinetic Monte Carlo ◽  
Realistic Model ◽  
Island Size ◽  
Island Nucleation ◽  
Homoepitaxial Growth ◽  
Coarsening Behavior ◽  
Kinetic Monte Carlo Simulations

AbstractThe results of recent theoretical and simulational studies of submonolayer and multilayer homoepitaxial growth are discussed. In the submonolayer regime, the results of kinetic Monte Carlo simulations are presented and shown to provide a quantitative explanation for the variation of the submonolayer island density, critical island size, island-size distribution and morphology as a function of temperature and deposition rate found in recent experiments. In multilayer growth, a realistic model for homoepitaxial growth on fcc and bcc lattices which takes into account the correct crystal structure is reviewed. The effects of instabilities which lead to mound formation and coarsening are discussed and a unified picture of the effects of attractive and repulsive interactions at ascending and descending steps on surface morphology and island nucleation is presented. An accurate prediction of the observed mound angle for Fe/Fe(100) deposition is obtained analytically and by kinetic Monte Carlo simulations. The general dependence of the mound angle, and mound coarsening behavior on temperature, deposition rate, and strength of the step barrier in bcc(100) and fcc(100) growth is also presented and compared with recent experiments.

Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC

2009 ◽  
Vol 615-617 ◽  
pp. 73-76 ◽  
Author(s):  
Massimo Camarda ◽  
Antonino La Magna ◽  
Francesco La Via
Keyword(s):  
Experimental Data ◽  
Phase Diagram ◽  
Growth Rate ◽  
Silicon Carbide ◽  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Recent Experimental Data ◽  
Homoepitaxial Growth ◽  
Continuous Models ◽  
Kinetic Monte Carlo Simulations

Using joined super-lattice Kinetic Monte Carlo simulations, continuous modelling and recent experimental data on the homoepitaxial growth of 4H Silicon Carbide we study the transition between monocrystalline and polycrystalline growth in terms of misorientation cut, growth rate and temperature. We compare these optimally calibrated results both with previous continuous models and literature data. We demonstrate that this study was, indeed, necessary to correctly reformulate the phase diagram of the transition.

GROWTH MECHANISM OF RING SHAPED NANOSTRUCTURES SELF-ASSEMBLY UPON DROPLET EPITAXY

2012 ◽  
Vol 19 (03) ◽  
pp. 1250029 ◽  
Author(s):  
X. TAN ◽  
J. X. ZHONG ◽  
G. W. YANG
Keyword(s):  
Monte Carlo ◽  
Self Assembly ◽  
Kinetic Monte Carlo ◽  
Morphological Evolution ◽  
Diffusion Barriers ◽  
The Self ◽  
Droplet Epitaxy ◽  
Enhanced Diffusion ◽  
Theoretical Predictions ◽  
Kinetic Monte Carlo Simulations

A quantitatively kinetic model has been established to address the self-assembly of the ring shaped nanostructures upon the droplet epitaxy via kinetic Monte Carlo simulations. The theoretical predictions about the temperature and As flux dependences of the self-assembly of the ring shaped nanostructures were in well agreement with recent experiments. It was found that the morphological evolution of the ring shaped nanostructures was attributed to the cooperation of the enhanced diffusion barriers of free Ga atoms in the inner ring region and the effects of the surface reconstruction around the Ga droplets during the arsenization step.

Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC

2009 ◽  
Vol 615-617 ◽  
pp. 117-120 ◽  
Author(s):  
Massimo Camarda ◽  
Antonino La Magna ◽  
Andrea Severino ◽  
Francesco La Via
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Growth Conditions ◽  
Specific Reference ◽  
Extended Study ◽  
Step Bunching ◽  
Homoepitaxial Growth ◽  
Atomic Force ◽  
Kinetic Monte Carlo Simulations

We discuss the possible source of surface instabilities (with specific reference to the step bunching phenomena) during the growth of cubic and hexagonal Silicon Carbide polytypes. For this analysis we use: results from super-lattice Kinetic Monte Carlo simulations, atomic force microscope surface analysis and literature data. We show that only hexagonal polytypes with misorientation cut toward the <11-20> direction suffer “intrinsically” the step bunching phenomena (i.e. it are present, independently on the growth conditions) whereas cubic polytypes and hexagonal ones with misorientation cut toward the <10-10> direction do not.

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