High-Efficiency CdTe Polycrystalline Thin-Film Solar Cells with an Ultra-Thin CuxTe Transparent Back-Contact

2005 ◽  
Vol 865 ◽  
Author(s):  
X. Wu ◽  
J. Zhou ◽  
A. Duda ◽  
J. C. Keane ◽  
T.A. Gessert ◽  
...  
Keyword(s):  
Thin Film ◽  
Near Infrared ◽  
High Efficiency ◽  
State Of The Art ◽  
Wavelength Region ◽  
Back Contact ◽  
Infrared Transmission ◽  
Polycrystalline Thin Film ◽  
Tandem Cell ◽  
Junction Device

AbstractTo fabricate a high-efficiency polycrystalline thin-film tandem cell, the most critical work is to make a high-efficiency top cell (>15%) with high bandgap (Eg=1.5-1.8 eV) and high transmission (T>70%) in the near-infrared (NIR) wavelength region. The CdTe cell is one of the candidates for the top cell, because CdTe state-of-the-art single-junction devices with efficiencies of more than 16% are available, although its bandgap (1.48 eV) is slightly lower for a top cell in a dual-junction device. In this paper, we focus on the development of an ultra-thin, low-bandgap CuxTe transparent back-contact to produce high-efficiency CdTe cells with high NIR transmission. We have achieved an NREL-confirmed 13.9%-efficient CdTe transparent solar cell with an infrared transmission of ~50% and a CdTe/CIS polycrystalline mechanically stacked thin-film tandem cell with an NREL-confirmed efficiency of 15.3%.

13·9%-efficient CdTe polycrystalline thin-film solar cells with an infrared transmission of ∼50%

2006 ◽  
Vol 14 (6) ◽  
pp. 471-483 ◽  
Author(s):  
X. Wu ◽  
J. Zhou ◽  
A. Duda ◽  
J. C. Keane ◽  
T.A. Gessert ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Infrared Transmission ◽  
Polycrystalline Thin Film

Decorative near-infrared transmission filters featuring high-efficiency and angular-insensitivity employing 1D photonic crystals

Nano Research ◽  
2018 ◽  
Vol 12 (3) ◽  
pp. 543-548 ◽  
Author(s):  
Chengang Ji ◽  
Chenying Yang ◽  
Weidong Shen ◽  
Kyu-Tae Lee ◽  
Yueguang Zhang ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Near Infrared ◽  
High Efficiency ◽  
Infrared Transmission ◽  
Transmission Filters

High Efficiency Thin Film Solar Cells with Intrinsic Microcrystalline Silicon Prepared by Hot Wire CVD

2002 ◽  
Vol 715 ◽  
Author(s):  
S. Klein ◽  
F. Finger ◽  
R. Carius ◽  
B. Rech ◽  
L. Houben ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Efficiency ◽  
Short Circuit ◽  
Wavelength Region ◽  
Maximum Efficiency ◽  
Hot Wire ◽  
Microcrystalline Silicon ◽  
Cell Parameters ◽  
Volume Fractions

AbstractThin film microcrystalline silicon solar cells were prepared with intrinsic absorber layers by Hot Wire CVD at various silane concentrations and substrate temperatures. Independently from the substrate temperature, a maximum efficiency is observed close to the transition to amorphous growth, i.e. the best cells already show considerable amorphous volume fractions. A detailed analysis of the thickness dependence of the solar cell parameters in the dark and under illumination indicate a high electronic quality of the i-layer material. Solar cells with very high open circuit voltages Voc up to 600mV in combination with fill factors above 70% and high short circuit current densities jsc of 22mA/cm2 were obtained, yielding efficiencies above 9%. The highest efficiency of 9.4% was achieved in solar cells of 1.4μm and 1.8μm thickness. These cells with high Voc have considerable amorphous volume fractions in the i-layer, leading to a reduced absorption in the infrared wavelength region.

Effect of Cu Deficiency on CuIn1-xGaxSe2 and High-efficiency Photovoltaic Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Sung-Ho Han ◽  
Falah S. Hasoon ◽  
Joel W. Pankow ◽  
Allen M. Hermann ◽  
Dean H. Levi
Keyword(s):  
Thin Film ◽  
High Efficiency ◽  
Composition Range ◽  
Valence Band Maximum ◽  
Repulsive Interaction ◽  
Polycrystalline Thin Film ◽  
Band Maximum ◽  
Cu Deficiency ◽  
Wide Range ◽  
Photovoltaic Solar Cells

AbstractWe report the results of our studies on the optical and electronic structure of a wide range of polycrystalline thin-film CuIn1-xGaxSe2 (CIGS) alloys. The composition range includes CIS and nearly stoichiometric (slightly Cu-poor) (24.3±0.3 at.% Cu) CIGS with x values located around the value that has the best efficiency (x ∼ 0.28). Relative to nearly stoichiometric CIS and CIGS, we find a reduction in the absorption strength in the spectral range 1-3 eV. This reduction can be explained in terms of the predominance of Cu 3d and Se 4p states at the valence band maximum (VBM). In addition, Cu-poor CIS and CIGS materials show an increase in bandgap because the p-d repulsive interaction in Cu-poor CIGS is less than that in nearly stoichiometric CIGS. High efficiency is discussed in terms of optical properties.

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