Modeling of HgCdTe Heterojunction Devices
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ABSTRACTA model for generating the composition and doping profiles from growth and diffusion parameters was developed for heterostructure devices. Poisson's equation was applied to these structures to predict barriers in the conduction band to minority carrier flow for long wavelength HgCdTe infrared detectors prepared by LPE techniques. Spectral response and quantum efficiency measurements illustrate the presence of these barriers and support the use of this model in predicting barrier formation.
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2021 ◽
2004 ◽
Vol 33
(6)
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pp. 526-530
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1962 ◽
Vol 13
(3)
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pp. 230-236
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2017 ◽
Vol 141
(5)
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pp. EL445-EL451
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