Computer Applications in Plasma Materials Processing

MRS Bulletin ◽  
1991 ◽  
Vol 16 (2) ◽  
pp. 16-22
Author(s):  
David B. Graves ◽  
Richard A. Gottscho

In manufacturing microelectronic and optoelectronic devices, thin solid films of various sorts are routinely deposited and etched using low pressure, weakly ionized plasmas. The term “plasma” in this context implies an ionized gas with nearly equal numbers of positive and negative charges. This definition is not very restrictive, so. there are an enormous number of phenomena that are termed plasmas. For example, very hot, magnetized, fully ionized plasmas exist in stellar environments and thermonuclear fusion experiments. High temperature electric arcs are a form of plasma as well. In contrast, the plasmas used in electronic materials processing are near room temperature and the gas is usually weakly ionized. Indeed, due to the sensitivity of electronic devices to high temperatures, their low operating temperature is one of the major advantages of plasma processes.Plasma processing is attractive because of two important physiochemical effects: energetic free electrons in the plasma (heated by applied electric fields) dissociate the neutral gas in the plasma to create chemically reactive species; and free positive ions are accelerated by the plasma electric fields to surfaces bounding the plasma. Reactive species created in the plasma diffuse to surfaces and adsorb; wafers to be processed are typically placed on one of these surfaces.The combination of neutral species adsorption and positive ion bombardment results in surface chemical reaction. If the products of the surface reaction are volatile, they leave the surface and etching results. If the products are involatile, a surface film grows.

MRS Bulletin ◽  
1996 ◽  
Vol 21 (8) ◽  
pp. 32-37 ◽  
Author(s):  
M.A. Lieberman ◽  
G.S. Selwyn ◽  
M. Tuszewski

Chemically reactive plasma discharges are widely used to process materials. A plasma is a primarily electrically neutral collection of free charged particles moving in random directions. The simplest plasma consists of electrons and one kind of positive ions. This article deals primarily with plasma discharges, which are plasmas having the following features:(1) They are driven electrically.(2) Charged-particle collisions with neutral-gas molecules are important.(3) There are boundaries at which surface losses are important.(4) Ionization of neutrals sustains the plasma in the steady state.One simple discharge consists of a voltage source that drives current through a low-pressure gas between two conducting plates or electrodes. The gas “breaks down” to form a plasma, usually weakly ionized—that is, the plasma density is only a small fraction of the neutral-gas density.The plasmas used in materials processing present an enormous range of charged-particle densities n and of temperatures Te, Ti, and T for electrons, ions, and processing gas, respectively. High-pressure (atmospheric) discharges are in near-thermal equilibrium (Te ~ Ti ~ T ~ 0.1–2 eV). Plasma temperatures are usually given in equivalent electron-volt units: One eV is equivalent to 11600 K through the Boltzmann constant. As discussed in the article by Boulos and Pfender in this issue of MRS Bulletin, these thermal discharges have high densities n ~ 1014-1019 particles/cm3 and are mainly used as heat sources. Low-pressure (1 mTorr–10 Torr) discharges are not in thermal equilibrium (Te ~ 2–5 eV ≫ Ti ~ T) and have low densities n ~ 109–1012 particles/cm3. As discussed in several of the following articles, these discharges are used as miniature chemical factories in which feedstock gases are broken into positive ions and chemically reactive etchants, deposition precursors, etc., which then flow to and physically or chemically react at the surface of a substrate.


Author(s):  
Hassan Tahir ◽  
Umair Khan ◽  
Anwarud Din ◽  
Yu-Ming Chu ◽  
Noor Muhammad

AIAA Journal ◽  
1998 ◽  
Vol 36 ◽  
pp. 816-822
Author(s):  
Igor V. Adamovich ◽  
Vish V. Subramaniam ◽  
J. W. Rich ◽  
Sergey O. Macheret

1991 ◽  
Vol 19 (6) ◽  
pp. 1090-1113 ◽  
Author(s):  
M.W. Blades ◽  
P. Banks ◽  
C. Gill ◽  
D. Huang ◽  
C. LeBlanc ◽  
...  

2002 ◽  
Vol 92 (11) ◽  
pp. 6423-6427 ◽  
Author(s):  
T. Murakami ◽  
T. Kaneko ◽  
J. Terashima ◽  
R. Hatakeyama ◽  
S. Murase ◽  
...  

2018 ◽  
Vol 72 (9) ◽  
Author(s):  
Pablo de Vera ◽  
Eugene Surdutovich ◽  
Nigel J. Mason ◽  
Fred J. Currell ◽  
Andrey V. Solov’yov

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