scholarly journals Optical Properties of Si-DOPED AlxGa1−xN/AlyGa1−yN (x=0.24−0.53, y=0.11) Multi-Quantum-Well Structures

1999 ◽  
Vol 4 (S1) ◽  
pp. 405-410
Author(s):  
H. Hirayama ◽  
Y. Aoyagi
Keyword(s):  
Quantum Well ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Quantum Well Structures ◽  
Si Doping ◽  
Active Layers ◽  
Metal Organic ◽  
Si Doped ◽  
Pl Emission ◽  
Multi Quantum Well

We demonstrate strong ultraviolet (UV) (280-330nm) photoluminescence (PL) emission from multi-quantum-well (MQW) structures consisting of AlGaN active layers fabricated by metal-organic chemical-vapor-deposition (MOCVD). Si-doping is shown to be very effective in order to enhance the PL emission of AlGaN QWs. We found that the optimum values of well thickness and Si-doping concentration of AlxGa1−xN/AlyGa1−yN (x=0.24−0.53, y=0.11) MQW structure for efficient emission were approximately 3nm and 2×1019cm−3, respectively. In addition, the PL intensities of AlGaN, GaN and InGaN quantum well structures are compared. We have found that the PL emission at 77K from a Al0.53Ga0.47N/Al0.11Ga0.89N MQW is as strong as that of InGaN QWs.

Optical Properties of Si-DOPED AlxGal-xN/AlyGal-yN (x=0.24-0.53, y=0.11) Multi-Quantum-Well Structures

1998 ◽  
Vol 537 ◽  
Author(s):  
H. Hirayama ◽  
Y. Aoyagi
Keyword(s):  
Quantum Well ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Quantum Well Structures ◽  
Si Doping ◽  
Active Layers ◽  
Metal Organic ◽  
Si Doped ◽  
Pl Emission ◽  
Multi Quantum Well

AbstractWe demonstrate strong ultraviolet (UV) (280-330nm) photoluminescence (PL) emission from multi-quantum-well (MQW) structures consisting of AlGaN active layers fabricated by metal-organic chemical-vapor-deposition (MOCVD). Si-doping is shown to be very effective in order to enhance the PL emission of AlGaN QWs. We found that the optimum values of well thickness and Si-doping concentration of AlxGal-xN/AlyGal-yN (x=0.24-0.53, y=0.11) MQW structure for efficient emission were approximately 3nm and 2×1019cm-3, respectively. In addition, the PL intensities of AlGaN, GaN and InGaN quantum well structures are compared. We have found that the PL emission at 77K from a Al0.53Ga0.47N/Al0.11Ga0.89N MQW is as strong as that of InGaN QWs.

Structural and Optical Properties of AlGaN/GaN Quantum-Well Structures Grown by MOCVD on Sapphire

1996 ◽  
Vol 449 ◽  
Author(s):  
R. Niebuhr ◽  
K. H. Bachem ◽  
D. Behr ◽  
C. Hoffmann ◽  
U. Kaufmann ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Chemical Vapor ◽  
Interface Roughness ◽  
Organic Chemical ◽  
Quantum Well Structures ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Metal Organic ◽  
Step Flow Growth

ABSTRACTAlGaN/GaN single quantum wells (QW) have been grown on 2” sapphire substrates (c-plane) by metal-organic chemical vapor deposition (MOCVD). The well width was varied between 20 and 40 Å for barriers containing 4 % and 16 % of aluminium. Cathodoluminescence (CL) and Photoluminescence (PL) spectra of the samples show, as expected, a shift of the quantum well emission to higher energies with decreasing well width, whereas the barrier luminescence stays at constant energy. Examination of the QWs by resonant Raman spectroscopy tuned to the gap of the well, clearly shows the GaN A1(LO) phonon besides the AlGaN A1(LO) phonon from the barrier. For a well width of 20 Å we observe a shift of the A1(LO) GaN phonon indicating a certain degree of intermixing at the GaN/AlGaN interface. Atomic Force Microscopy (AFM) reveals that the layers are growing in a 2-dimensional step flow growth mode with step heights of 3 and 6 Å corresponding to mono- and biatomic steps. High Resolution Transmission Electron Microscopy (HRTEM) micrographs of the 40 Å well show a very low interface roughness of 1–2 atomic layers.

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