scholarly journals Universal closed-form expressions for the inductance of tapered through silicon vias (T-TSVs) based on vector magnetic potential

2016 ◽  
Vol 13 (18) ◽  
pp. 20160621-20160621 ◽  
Author(s):  
Zheng Mei ◽  
Gang Dong ◽  
Yintang Yang ◽  
Junping Zheng ◽  
Yingbo Zhao ◽  
...  
Keyword(s):  
Closed Form ◽  
Magnetic Potential ◽  
Through Silicon Vias ◽  
Vector Magnetic Potential ◽  
Silicon Vias

Failure and Stress Analysis of Cu TSVs Using GHz-Scanning Acoustic Microscopy and Scanning Infrared Polariscopy

2015 ◽  
Author(s):  
Ingrid De Wolf ◽  
Ahmad Khaled ◽  
Martin Herms ◽  
Matthias Wagner ◽  
Tatjana Djuric ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Stress Analysis ◽  
Rayleigh Waves ◽  
Acoustic Microscopy ◽  
Scanning Acoustic Microscopy ◽  
Through Silicon Vias ◽  
Stress Anisotropy ◽  
Silicon Vias ◽  
Ic Technology ◽  
Detection Of Defects

Abstract This paper discusses the application of two different techniques for failure analysis of Cu through-silicon vias (TSVs), used in 3D stacked-IC technology. The first technique is GHz Scanning Acoustic Microscopy (GHz- SAM), which not only allows detection of defects like voids, cracks and delamination, but also the visualization of Rayleigh waves. GHz-SAM can provide information on voids, delamination and possibly stress near the TSVs. The second is a reflection-based photoelastic technique (SIREX), which is shown to be very sensitive to stress anisotropy in the Si near TSVs and as such also to any defect affecting this stress, such as delamination and large voids.

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