A 44Gbit/s Wide-Dynamic Range and High-Linearity Transimpedance Amplifier in 130nm BiCMOS Technology

Author(s):  
Xianliang LUO ◽  
Yingmei CHEN ◽  
Mohamed ATEF ◽  
Guoxing WANG
2012 ◽  
Vol 9 (12) ◽  
pp. 1012-1017 ◽  
Author(s):  
Kimikazu Sano ◽  
Hiroyuki Fukuyama ◽  
Makoto Nakamura ◽  
Miwa Mutoh ◽  
Hideyuki Nosaka ◽  
...  

2013 ◽  
Vol 43 (3) ◽  
pp. 277-285 ◽  
Author(s):  
G. Leuzzi ◽  
V. Stornelli ◽  
L. Pantoli ◽  
S. Del Re

Optik ◽  
2015 ◽  
Vol 126 (15-16) ◽  
pp. 1389-1393 ◽  
Author(s):  
Lianxi Liu ◽  
Jiao Zou ◽  
Ning Ma ◽  
Zhangming Zhu ◽  
Yintang Yang

2014 ◽  
Vol 35 (1) ◽  
pp. 015001 ◽  
Author(s):  
Lianxi Liu ◽  
Jiao Zou ◽  
Yunfei En ◽  
Shubin Liu ◽  
Yue Niu ◽  
...  

2022 ◽  
Vol 20 (2) ◽  
pp. 022503
Author(s):  
Yu Li ◽  
Weifang Yuan ◽  
Ke Li ◽  
Xiaofeng Duan ◽  
Kai Liu ◽  
...  

2021 ◽  
Vol 16 (11) ◽  
pp. P11032
Author(s):  
Hao Liu ◽  
Chunhui Dong ◽  
XinYing Yang ◽  
Feng Cheng ◽  
Qingxian Zhang ◽  
...  

Abstract A measuring circuit is designed based on the transimpedance amplifier. The methods of reducing parasitic capacitance and improving amplifier performance are introduced in detail. The influence of the parasitic capacitance generated by the feedback resistors on the bandwidth in the transimpedance amplification circuit is discussed. The circuit can measure the wide-dynamic-range low current ranging from 10-13 A to 10-5 A in four ranges. The circuit's bandwidth is up to 500 Hz when the circuit can normally work to measure a wide-range low current. The peak-to-peak amplitude of circuit noise is less than 0.22 pA. The current drift is less than 1.06 fA/∘C over a temperature range of 0∘C to 85∘C, and the integral nonlinearity is less than 0.25%.


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