AXISYMMETRIC AND 3-D NUMERICAL SIMULATIONS OF THERMOMECHANICAL BEHAVIOR DURING THE SPARK PLASMA SINTERING "SPS" PROCESS OF POLYCRYSTALLINE MATERIALS: THE EFFECTS OF LATERAL SURFACES RADIATION ON THE OVERALL HEAT TRANSFER

Author(s):  
Farid Mechighel ◽  
Bernard Pateyron ◽  
Mahfoud Kadja
2003 ◽  
Vol 793 ◽  
Author(s):  
Lidong Chen ◽  
Jun Jiang ◽  
Xun Shi

ABSTRACTThermoelectric performance of polycrystalline materials is greatly influenced by their microstructures including grain sizes, grain boundaries, grain orientations in anisotropic compounds, etc. The material microstructures are sensitive to the preparation processes and the starting materials. In the present study, n-type and p-type Bi2Te3-based sintered materials with highly preferred grain orientations have been fabricated through a spark plasma sintering (SPS) technique, by controlling the particle sizes of the starting powder and other sintering process parameters. The obtained textured Bi2Te3-based materials show a high mechanical strength as 80MPa in bending strength, which is 7 to 8 times as that of the melted ingot materials, and a significant anisotropy in thermoelectric transport properties. The optimal figure of merit (ZT) of the sintered materials in the direction perpendicular to the pressing direction (with c-axis preferred orientation) is comparable to that of the zone-melted ingots in the same crystallographic orientation.


2020 ◽  
Vol 46 (4) ◽  
pp. 4998-5007 ◽  
Author(s):  
Milad Sakkaki ◽  
Farhad Sadegh Moghanlou ◽  
Mohammad Vajdi ◽  
Mehdi Shahedi Asl ◽  
Mohsen Mohammadi ◽  
...  

2020 ◽  
Vol 46 (6) ◽  
pp. 7615-7624 ◽  
Author(s):  
Saeed Mohammad Bagheri ◽  
Mohammad Vajdi ◽  
Farhad Sadegh Moghanlou ◽  
Milad Sakkaki ◽  
Mohsen Mohammadi ◽  
...  

2016 ◽  
Vol 3 (9) ◽  
pp. 1152-1159 ◽  
Author(s):  
Xin-Ke Wang ◽  
Igor Veremchuk ◽  
Matej Bobnar ◽  
Jing-Tai Zhao ◽  
Yuri Grin

The thermoelectric properties of polycrystalline materials on the basis of the solid solution Pb1−xEuxTe prepared by spark-plasma-sintering are characterized. The solid solution undergoes a metal–semiconductor transition in parallel to the p–n transition around 500 K.


2016 ◽  
Vol 18 (11) ◽  
pp. 1952-1957 ◽  
Author(s):  
Karolina Kozak ◽  
Ariane Dosi ◽  
Guy Antou ◽  
Nicolas Pradeilles ◽  
Thierry Chotard

2011 ◽  
Vol 49 (01) ◽  
pp. 40-45 ◽  
Author(s):  
Hyun-Kuk Park ◽  
Seung-Min Lee ◽  
Hee-Jun Youn ◽  
Ki-Sang Bang ◽  
Ik-Hyun Oh

2017 ◽  
Vol 59 (11-12) ◽  
pp. 1033-1036 ◽  
Author(s):  
Sherzod Kurbanbekov ◽  
Mazhyn Skakov ◽  
Viktor Baklanov ◽  
Batyrzhan Karakozov

2012 ◽  
Vol 27 (9) ◽  
pp. 961-964 ◽  
Author(s):  
Zhi-Qiang MA ◽  
Ying-Hu JI ◽  
Lian-Jun WANG

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