Superradiance pulse duration by molecular nitrogen ions in air laser plasma

Author(s):  
I.A. Zyatikov ◽  
◽  
V.F. Losev ◽  
V.E. Prokopev ◽  
D.M. Lubenko ◽  
...  

The results of study of superradiance pulse duration by molecular nitrogen ions in air for various focusing conditions of femtosecond radiation pulse with a wavelength of 950 nm are presented. Parameters of active medium are analyzed and mechanism for the formation of picosecond superradiance pulse at femtosecond seed duration is proposed.

2021 ◽  
Author(s):  
Ilya Zyatikov ◽  
Valery Losev ◽  
Vladimir Prokopev

2020 ◽  
Vol 45 (23) ◽  
pp. 6518
Author(s):  
Ilya A. Zyatikov ◽  
Valery F. Losev ◽  
Dmitriy M. Lubenko ◽  
Evgeniy A. Sandabkin

Author(s):  
I. A. Zyatikov ◽  
V. F. Losev ◽  
V. E. Prokopiev ◽  
D. M. Lubenko ◽  
E. A. Sandabkin
Keyword(s):  

Author(s):  
A.A. Ilyin ◽  
◽  
K.A. Shmirko ◽  
S.S. Golik ◽  
D.Yu. Proschenko ◽  
...  

A numerical model describing the dynamics of plasma particle density upon filamentation of femtosecond radiation in the air is presented. The simulation results are in good agreement with the experimental data. The pumping processes of the N2 and N2+ radiative levels are investigated. The model predicts a sharp drop in electron temperature and density within 1 ns. For the first positive nitrogen system, an excess of the population of the upper radiation level over the population of the lower one is observed for 550 ps.


1988 ◽  
Vol 128 ◽  
Author(s):  
W. M. Lau

ABSTRACTThe ion bombardment effects of low energy molecular nitrogen ions (100eV) on GaAs have been investigated using in-situ polar angle dependent X-ray photoelectron spectroscopy. It was found that arsenic and gallium nitrides were formed as a result of the nitrogen ion bombardment. The ion bombardment also caused a depletion of arsenic in the near surface region. For example, with a dose of 6×1015 cm-2 of nitrogen molecular ions at 100eV, the surface structure can be described approximately as 1.5nm of Ga0.67A0.33N on GaAs. The ion bombardment moves the Fermi levels of both n-type and p-type GaAs to mid-gap. Heating the ion bombarded samples in a vacuum chamber to 500°C desorbs all arsenic nitrides but most of the gallium nitrides remain on the surface. The Fermi levels of both n-type and p-type are then stablized at about 0.4eV from the valence band maximum. A surface type-inversion of the n-type substrate is therefore induced by the nitrogen-ionbombardment/annealing treatment.


2020 ◽  
Vol 456 ◽  
pp. 124573 ◽  
Author(s):  
N.G. Ivanov ◽  
I.A. Zyatikov ◽  
V.F. Losev ◽  
V.E. Prokop’ev

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