Ion Bombardment Effects on GaAs Using 100eV Nitrogen Ions

1988 ◽  
Vol 128 ◽  
Author(s):  
W. M. Lau
Keyword(s):  
Photoelectron Spectroscopy ◽  
Molecular Nitrogen ◽  
Polar Angle ◽  
Ion Bombardment ◽  
Molecular Ions ◽  
Near Surface ◽  
Nitrogen Ions ◽  
Gallium Nitrides ◽  
Nitrogen Ion ◽  
P Type

ABSTRACTThe ion bombardment effects of low energy molecular nitrogen ions (100eV) on GaAs have been investigated using in-situ polar angle dependent X-ray photoelectron spectroscopy. It was found that arsenic and gallium nitrides were formed as a result of the nitrogen ion bombardment. The ion bombardment also caused a depletion of arsenic in the near surface region. For example, with a dose of 6×1015 cm-2 of nitrogen molecular ions at 100eV, the surface structure can be described approximately as 1.5nm of Ga0.67A0.33N on GaAs. The ion bombardment moves the Fermi levels of both n-type and p-type GaAs to mid-gap. Heating the ion bombarded samples in a vacuum chamber to 500°C desorbs all arsenic nitrides but most of the gallium nitrides remain on the surface. The Fermi levels of both n-type and p-type are then stablized at about 0.4eV from the valence band maximum. A surface type-inversion of the n-type substrate is therefore induced by the nitrogen-ionbombardment/annealing treatment.

THE INFLUENCE OF ION IRRADIATION ON THE ABSOLUTE QUANTUM PHOTOYIELD OF DIAMOND FILMS STUDIED BY ELECTRON SPECTROSCOPY AND H+ PHOTODESORPTION

2000 ◽  
Vol 07 (04) ◽  
pp. 455-462 ◽  
Author(s):  
A. LAIKHTMAN ◽  
A. HOFFMAN
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Ion Irradiation ◽  
Hydrogen Plasma ◽  
Secondary Electron Emission ◽  
Diamond Films ◽  
Ion Bombardment ◽  
Partial Recovery ◽  
Near Surface ◽  
Absolute Quantum

In this study we report on absolute quantum photoyield (QPY) measurements from well-defined defective diamond surfaces in the 140–200 nm spectral range. The effect of defects in polycrystalline diamond films on their photoemission properties is studied by intentionally introducing damage using room temperature 30 keV Xe + ion bombardment to doses ranging from 2×1013 to 2×1015 ions/cm 2. Ion bombardment results in a drastic degradation of the QPY, to less than 1% at 140 nm, even at the lowest implantation dose compared to ~11.5% measured for the unimplanted diamond film. Analysis of the ion-damaged diamond films is performed by photon-stimulated ion desorption (PSID) measurements of H +, high resolution C(KLL) Auger electron spectroscopy and X-ray photoelectron spectroscopy. These measurements reveal that the decay in photoemission is due to the gradual formation of nondiamond carbon in the near-surface region. This damage leads to a change of the electron affinity from negative to positive, as determined by secondary electron emission measurements. PSID measurements reveal that the ion-bombarded diamond films remain hydrogen-terminated. MW hydrogen plasma treatment results in complete regeneration of the photoemission properties for diamond films implanted to Xe + doses of up to 2×1014 cm -2; only partial recovery was obtained for films irradiated with a higher ion dose.

Band alignment and Schottky behaviour of InN/GaN heterostructure grown by low-temperature low-energy nitrogen ion bombardment

RSC Advances ◽  
2014 ◽  
Vol 4 (52) ◽  
pp. 27308-27314 ◽  
Author(s):  
Shibin Krishna TC ◽  
Govind Gupta
Keyword(s):  
Low Temperature ◽  
Schottky Diodes ◽  
Ion Bombardment ◽  
Band Alignment ◽  
Low Energy ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
Gan Heterostructure

InN/GaN heterostructure based Schottky diodes are fabricated by low energetic nitrogen ions at 300 °C.

Halogen Based Surface Chemistries for Graphene Synthesis

2010 ◽  
Vol 1259 ◽  
Author(s):  
Srikanth Raghavan ◽  
Timothy C. Nelson ◽  
Tobias Denig ◽  
C D Stinespring
Keyword(s):  
Electron Transfer ◽  
Photoelectron Spectroscopy ◽  
Surface Layers ◽  
Near Surface ◽  
X Ray ◽  
Inductively Coupled ◽  
Graphene Synthesis ◽  
P Type ◽  
Surface Chemistries ◽  
Second Peak

AbstractHalogen based (CF4 and Cl2) inductively coupled reactive ion etching (ICP-RIE) has been used to selectively etch silicon from 6H-SiC to produce a controlled number of carbon layers. After annealing at temperatures in the range of 550 °C to 1100 °C to reconstruct the near surface layers, x-ray photoelectron spectroscopy has been used to characterize the composition of the films. For the Cl2 based ICP-RIE, two carbon species are observed. One is due to carbon bound as SiC in the substrate and a second which can be attributed to graphene. In the case of CF4 based etching the situation is similar except the second peak is most closely aligned with p-type graphene. This is most likely due to electron transfer from the graphene to the trace levels of fluorine remaining on the surface after annealing.

scholarly journals From megahertz to terahertz qubits encoded in molecular ions: theoretical analysis of dipole-forbidden spectroscopic transitions in N2+

2020 ◽  
Vol 22 (40) ◽  
pp. 23083-23098
Author(s):  
Kaveh Najafian ◽  
Ziv Meir ◽  
Stefan Willitsch
Keyword(s):  
Magnetic Fields ◽  
Theoretical Analysis ◽  
Degrees Of Freedom ◽  
Theoretical Study ◽  
Molecular Nitrogen ◽  
Molecular Ions ◽  
Nitrogen Ions

Theoretical study of the implementation of qubits and clock transitions in the spin, rotational, and vibrational degrees of freedom of molecular nitrogen ions including the effect of magnetic fields.

GaNxAs1-x Growth by Molecular Beam Epitaxy with Dispersive Nitrogen

2001 ◽  
Vol 693 ◽  
Author(s):  
S.Z. Wang ◽  
S.F. Yoon ◽  
T.K. Ng ◽  
W.K. Loke ◽  
W.J. Fan
Keyword(s):  
Optical Property ◽  
Molecular Beam Epitaxy ◽  
Deleterious Effect ◽  
Molecular Beam ◽  
Ion Bombardment ◽  
High Quality ◽  
Growth Technique ◽  
Material Quality ◽  
Nitrogen Ions ◽  
Nitrogen Ion

AbstractThe effect of energetic nitrogen ion bombardment during growth may have a deleterious effect on the material quality. To avoid the bombardment effect of energetic nitrogen ions, a modified mode for GaAsN growth using dispersive nitrogen is reported. High quality GaAsN epilayers and good GaAsN/GaAs interface were achieved using this growth mode. The results suggest that the surface of samples grown using dispersive nitrogen has fewer defects than those grown using direct nitrogen beam. The optical property of GaAsN samples grown using the dispersive nitrogen technique was found to improve, due to the lower ion bombardment effect. This growth technique is expected to be advantageous for growing high quality GaAsN materials for optoelectronic applications.

Investigation of Mechanical Properties and Microstructure of Boron Films Implanted by Polyenergetic Nitrogen Ion

2008 ◽  
Vol 373-374 ◽  
pp. 396-399
Author(s):  
Zhi Hai Cai ◽  
Ping Zhang ◽  
Jia Wu He ◽  
Jun Jun Zhao ◽  
Jun Tan
Keyword(s):  
Mechanical Properties ◽  
Photoelectron Spectroscopy ◽  
High Speed ◽  
Ion Beam ◽  
High Speed Steel ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Nitrogen Ions ◽  
Ir Analysis ◽  
Nitrogen Ion

In this paper, boron films were deposited on W6Mo5Cr4V2 high speed steel (HSS) via ion beam sputtering of boron target and implanted with polyenergetic(50 keV, 30 keV, 10 keV) nitrogen ions. The mechanical properties of the implanted layer were tested by Vicker`s hardness and SKODA wear tester. The microstructure of the implanted layer was analysed by X-ray Photoelectron Spectroscopy (XPS) and Fourier Infrared (IR) spectroscopy. Experimental results showed that the HSS substrate was intensified obviously after the implantation of boron and nitrogen ion. When the nitrogen dose equals to 12.8×1017 ions/cm2, the hardness reaches its highest value, HV1982 and the relative wearability was increased for about ten times under the load of 30N. XPS depth concentration profiles show an interfacial mixing between film and substrate, and compared with monoenergetic ion implantation, polyenergetic ion implanted layer have an even N/B distribution. Combined with XPS and IR analysis results, It can conclude that boron exists in the form of boron nitride and first as a-BN or h-BN, with the depth decreasing, it has a tendency to transform to c-BN.

Fabrication of P-Type Cuinse2 Thin Film by MBD Using ECR Excited Nitrogen Ion Source

1992 ◽  
Vol 268 ◽  
Author(s):  
M. Nishitani ◽  
T. Negami ◽  
M. Terauchi ◽  
T. Wada ◽  
T. Hirao
Keyword(s):  
Thin Films ◽  
Ion Source ◽  
Rich Region ◽  
Ecr Plasma ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
Excited Nitrogen ◽  
P Type ◽  
Cuinse2 Thin Film ◽  
Type Conduction

ABSTRACTPolycrystalline CuInSe2 thin films were prepared by coevaporation of the elements under the irradiation of nitrogenions excited by ECR plasma. Nitrogen atoms were doped uniformly in the obtained CuInSe2 films according to the SIMS analysis. The films showed p-type conduction even in the slightly In-rich region where the coevaporation films without the irradiation of nitrogen ions showed n-type conduction. These results show that p-type CuInSe2 thin films even in the slightly In-rich region can be fabricated by the irradiation of ECR excited nitrogen ions during its ternary coevaporation process.

Study of near surface layer of graphite produced by nitrogen ion bombardment at high doses

2002 ◽  
Vol 157 (5) ◽  
pp. 493-508 ◽  
Author(s):  
L. D. Bogomolova ◽  
A. M. Borisov ◽  
N. A. Krasil'Nikova ◽  
E. S. Mashkova ◽  
A. S. Nemov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Ion Bombardment ◽  
Near Surface ◽  
Nitrogen Ion ◽  
High Doses

Surface Modification of Pure Titanium by Nitrogen Ion Implantation at Different Beam Energy and Dose

2011 ◽  
Vol 462-463 ◽  
pp. 750-755 ◽  
Author(s):  
Nurdin Ali ◽  
Haryanti Samekto ◽  
Mohd Imran Ghazali ◽  
M. Ridha
Keyword(s):  
Corrosion Resistance ◽  
Pure Titanium ◽  
Surface Hardness ◽  
Surface Characteristics ◽  
Grazing Incidence ◽  
Near Surface ◽  
Wear And Corrosion ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
Wear And Corrosion Resistance

The implantation of nitrogen ion is one of the important techniques for modifying the surface characteristics to improve wear and corrosion resistance of commercially pure (cp) Titanium. Although nitrogen ions implanted titanium in various dose demonstrated significant changes of the wear and corrosion resistance, the variable energy implanted is still not yet fully studied. Nitrogen ions were implanted in cp Titanium surface with varies of both dose of 0.5; 1.0 and 2.0 x1017 ions cm-2 and energy of 80, 100 and 115 keV. The nitrogen ion implanted cp Titanium demonstrated an increase in the surface hardness and improvement in corrosion behavior. The maximum surface hardness was delivered by the specimens implanted with the dose of 2.0x1017 ions cm-2 at energy of 80 keV. Grazing incidence x-ray diffraction studies indicated that TiN phase was formed on near surface substrate. Electrochemical tests in 3.5%-wt NaCl solution depicted significant improvements in corrosion resistance for specimens implanted with dose of 0.5x1017 and 1.0x1017 ions cm-2 at energy of 80 keV, dose of 1.0x1017 and 2.0x1017 ions cm-2 at energy of 100 keV. The dose of 2.0x1017 ions cm-2 and energy of 100 were the best implantation parameter in this study.

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