scholarly journals Sn-doped CdS: A New Intermediate Band Material for Solar Cells

Author(s):  
Jianbo Yin ◽  
Xiaobin Yan ◽  
Min Zhu

Abstract In this paper, the electronic structure and optical properties of CdS doped by Sn with different concentrations were investigated by first principles. The calculation results of electronic structure show that the doping of Sn can produce a deep impurity level band in the band structure of CdS. The calculation results of optical property show that Sn doping can increase the light absorption coefficient and conductivity of CdS. The overall calculation results show that Sn doping can produce stable intermediate band structure and significantly improve the optical property of CdS.

1995 ◽  
Vol 34 (Part 1, No. 8A) ◽  
pp. 3987-3990 ◽  
Author(s):  
Yoshiharu Anda ◽  
Takuya Ariki ◽  
Takeshi Kobayashi

2012 ◽  
Vol 46 (6) ◽  
pp. 741-748 ◽  
Author(s):  
E. P. Skipetrov ◽  
A. N. Golovanov ◽  
A. V. Knotko ◽  
E. I. Slyn’ko ◽  
V. E. Slyn’ko

RSC Advances ◽  
2016 ◽  
Vol 6 (112) ◽  
pp. 110511-110516 ◽  
Author(s):  
M. M. Han ◽  
X. L. Zhang ◽  
Z. Zeng

As an intermediate band material, the dynamical and phase stability and optoelectronic properties of Sn doped CuGaS2 are systematically investigated, and suggest that CuGaS2 that is moderately doped with Sn can be a potential candidate for photovoltaic applications.


1999 ◽  
Vol 59 (20) ◽  
pp. 12928-12934 ◽  
Author(s):  
E. P. Skipetrov ◽  
N. A. Chernova ◽  
E. I. Slyn’ko ◽  
Yu. K. Vygranenko

1982 ◽  
Vol 114 (2) ◽  
pp. K153-K156 ◽  
Author(s):  
E. Litwin-Staszewska ◽  
L. Kończewicz ◽  
R. Piotrzkowski ◽  
W. Szymańska

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