Gain Compression of n-MESFET for High Power Applications in MIMO
Abstract In this paper, a new n-type recessed Metal semiconductor field effect transistor (MESFET) with GaAs/ SiC materials is designed for high power applications in Multi Input Multi Output (MIMO) systems. Based on electrical characteristics of MESFET, a SPICE model of the proposed device is developed. For power switches, the power MESFETs are used. The feasibility of the technology is validated by the electrical measurements of the device. The operational technology has been shown by the characterizations done on the proposed device. To optimize the electrical performance, the contact resistance technique has to be enhanced. In this work, the output power and Gain compression of proposed n-channel MESFET at 100 MHz and 1 GHz for high input power is obtained. The output power at fundamental frequency of operation for high input power is also obtained.
