scholarly journals Study of the voltage doubler rectifier circuit with partial smoothing

1999 ◽  
Vol 83 (Appendix) ◽  
pp. 61-61
Author(s):  
Takashi Karita ◽  
Tetsuya Iizuka ◽  
Yoshio Watanabe
Author(s):  
Chuc Huu Doan ◽  
Duong Gia Bach

The purpose of this work is to propose rectifier circuit topologies for microwave power transmission system operating at ISM band. This paper particularly presents in detail the proposed rectifier circuit configurations including series diode half wave rectifier and voltage doubler rectifier. The maximum conversion efficiency of rectifier using series diode half wave rectifier is 40.17 % with 220 W load resistance whereas it is 70.06 % with 330 W load resistance for voltage doubler rectifier. Compared to the series rectifier circuit, it is significant to note that the voltage doubler rectifier circuit has higher efficiency. The circuits presented are tuned for a center frequency of 2.45 GHz. The rectifiers were fabricated using microstrip technology. The design, fabrication and measurement results were obtained using a well-known professional design software for microwave engineering, Advanced Design System 2009 (ADS 2009). All design and measurement results will be reported.


2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Dalia H. Sadek ◽  
Heba A. Shawkey ◽  
Abdelhalim A. Zekry

A compact, single-layer microstrip rectenna for dedicated far-field RF wireless power-harvesting applications is presented. The proposed rectenna circuit configurations including multiband triple L-Arms patch antenna with diamond slot ground are designed to resonate at 10, 13, 17, and 26 GHz with 10 dB impedance bandwidths of 0.67, 0.8, 2.45, and 4.3 GHz, respectively. Two rectifier designs have been fabricated and compared, a half wave rectifier with a shunted Schottky diode and a voltage doubler rectifier. The measured and simulated maximum conversion efficiencies of the rectifier using the shunted diode half-wave rectifier are 41%, and 34%, respectively, for 300 Ω load resistance, whereas they amount to 50% and 43%, respectively, for voltage doubler rectifier with 650 Ω load resistance. Compared to the shunted rectifier circuit, it is significant to note that the voltage doubler rectifier circuit has higher efficiency. Both rectifier’s circuits presented are tuned for a center frequency of 10 GHz and implemented using 0.81 mm thick Rogers (RO4003c) substrate. The overall size of the antenna is 16.5 × 16.5 mm2, and the shunted rectifier is only 13.3 × 8.2 mm2 and 19.7 × 7.4 mm2 for the voltage doubler rectifier. The antenna is designed and simulated using the CST Microwave Studio Suite (Computer Simulation Technology), while the complete rectenna is simulated using Agilent’s ADS tool with good agreement for both simulation and measurements.


2008 ◽  
Vol 128 (2) ◽  
pp. 151-152 ◽  
Author(s):  
Tsuyoshi Ueda ◽  
Takahisa Ohji ◽  
Kenji Amei ◽  
Masaaki Sakui

Author(s):  
Masayuki Uchihara ◽  
Hiroki Tamura ◽  
Koichi Tanno

2011 ◽  
Vol 131 (5) ◽  
pp. 762-763 ◽  
Author(s):  
Masaaki Sakui ◽  
Tsubasa Shimizu ◽  
Kenji Amei ◽  
Takahisa Ohji

2019 ◽  
Vol 139 (1) ◽  
pp. 102-103
Author(s):  
Kan Terazawa ◽  
Yuki Oku ◽  
Shin-ichi Motegi ◽  
Yasuyuki Nishida

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