ELECTRICAL RESISTANCE INVESTIGATION OF STRONTIUM TITANATE FILMS FORMED BY SOL–GEL METHOD

Author(s):  
A. V. Ermachikhin ◽  
◽  
N. V. Mukhin ◽  
V. G. Litvinov ◽  
N. B. Rybin ◽  
...  
2018 ◽  
Vol 125 (4) ◽  
pp. 492-498 ◽  
Author(s):  
N. I. Stas’kov ◽  
A. B. Sotskii ◽  
L. I. Sotskaya ◽  
I. V. Ivashkevich ◽  
A. I. Kulak ◽  
...  

2020 ◽  
Vol 28 ◽  
pp. 48-52 ◽  
Author(s):  
Dmitriy Sergeevich Permyakov ◽  
Stanislav Ivanovich Rembeza ◽  
Tatiana Gennadevna Menshikova ◽  
Vladimir Evgenevich Polkovnikov ◽  
Maksim Aleksandrovich Belykh

This article discusses the effect of annealing time at temperatures of 400 and 500 ° C on the electrophysical properties of CuO films prepared by the sol-gel method based on isopropyl alcohol, copper acetate and diethylamine. The film thickness was 440 nm. Phase composition, electrical resistance, conductivity type, optical properties of films are determined.


2015 ◽  
Vol 57 (10) ◽  
pp. 2030-2033 ◽  
Author(s):  
H. Sohrabi Anaraki ◽  
N. V. Gaponenko ◽  
V. G. Litvinov ◽  
A. V. Ermachikhin ◽  
V. V. Kolos ◽  
...  

2007 ◽  
Vol 1034 ◽  
Author(s):  
Kiyoshi Uchiyama ◽  
Daiki Fukunaga ◽  
Tadashi Shiosaki

AbstractHighly oriented strontium titanate (STO) thin films were successfully deposited on sapphire substrates using a sol-gel method. Sintering temperature of 1400°C and the use of c-cut sapphire for the substrates are the keys to obtain highly oriented thin films. The sample obtained on c-cut sapphire with a sintering temperature of 1400°C showed quite high (111)-orientation and a narrow full width half maximum (FWHM) value of 0.265°, which indicates a high quality deposition of the STO thin films.We believe this high quality STO deposition technique will bring a new scope of oxide material applications for future electronic devices.


2017 ◽  
Vol 84 (1) ◽  
pp. 132-135 ◽  
Author(s):  
A. I. Kulak ◽  
H. Sohrabi Anaraki ◽  
N. V. Gaponenko ◽  
L. S. Khoroshko ◽  
P. A. Kholov ◽  
...  

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