A novel two-step strategy to fabricate phase-pure SnS photoelectrode with tunable conductivity: formation mechanism and photoelectrochemical properties

Tin monosulfide (SnS), as a narrow band gap semiconductor for visible-light harvesting, nevertheless the easy formation of secondary phases such as Sn2S3 and SnS2 severely restricts its photoelectrochemical properties. Herein, we proposed a novel two-step strategy to fabricate phase-pure SnS photoelectrode with tunable conductivity on Ti foil substrate and carefully investigated the formation mechanism and photoelectrochemical properties. The tunable conductivity is determined by Na2SO4 pretreatment before annealing, which is supported by the EDS, XPS, and EPR characterizations. Na+ adsorbed to the edge of the precursor SnS2 nanosheets forming a dangling bond adsorption will protect S2- against reacting with the trace oxygen in the CVD system within a certain temperature range (< 525 ℃), thereby reducing the generation of S vacancies to adjust the S/Sn ratio and further regulating the conductivity type. Moreover, the anodic photocurrent density of SnS thin films was about 0.32 mA/cm2 at 1.23 V vs. RHE with the separation and injection efficiency of 1.22 % and 72.78 % and a maximum cathodic photocurrent density can reach approximately -0.36 mA/cm2 at 0 V vs. RHE with the separation and injection efficiency 1.15 % and 5.44 % respectively. The method shown in this work provides an effective approach to control the electrical conductivity of SnS thin films with considerable photocurrent response for phase-pure SnS.

Dependence of field-effect biosensor sensitivity on photo-induced processes in Si and its conductivity type

The effect of photoelectron processes in n-Si and p-Si on the glucose sensitivity of a capacitive field-effect biosensor based on electrolyte/oxide/semiconductor structure was investigated. We obtained that illumination of n-Si/SiO2/PEI structure during the GOx adsorption increases the glucose sensitivity by three times compare to GOx adsorption in the dark. In contrast, p-Si illumination during the GOx adsorption led to a decrease in sensor sensitivity from 2.9 mV/mM to 2.2 mV/mM. The result is explained by a change in the density of immobilized GOx molecules due to a change in the electrostatic forces of attraction under illumination and stabilization of the photo-generated charge on the surface electronic states of the Si/SiO2 and SiO2/PEI interfaces after illumination.

Dislocation-related conductivity in Au(In)/Cd1–xZnxTe(x = 0, 0.1) Schottky contacts

Dislocation-related conductivity is studied in Schottky contacts Au(In)/Cd1-xZnxTe (x = 0, 0.1) prepared on the surface of single crystals modified by multiple irradiation with a ruby laser and mechanical polishing. The contacts were examined by measuring the DC current as a function of the applied bias and temperature as well as the photoelectric response. It is shown that both methods of surface modification result in p-to-n conversion of the conductivity type of the surface layer. The charge transfer in contacts is explained by the formation of dislocation networks buried under the surface. A model of two potential barriers is proposed for the interpretation of the photovoltaic response in contacts. Their existence is associated with compressive strains in the modified surface layer caused by dislocations, which leads to an increase in the band gap and the formation of a heterostructure.

Nickelocene-Filled Purely Metallic Single-Walled Carbon Nanotubes: Sorting and Tuning the Electronic Properties

We conducted the filling of single-walled carbon nanotubes (SWCNTs) with nickelocene molecules and separation of the filled SWCNTs by conductivity type by density-gradient ultracentrifugation. We tailored the electronic properties of nickelocene-filled purely metallic SWCNTs by thermal treatment in high vacuum. Our results demonstrated that annealing at low temperatures (360–600 °C) leads to n-doping of SWCNTs, whereas annealing at high temperatures (680–1200 °C) results in p-doping of SWCNTs. We found a correlation between the chemical state of the incorporated substances at different annealing temperatures and its influence on the electronic properties of SWCNTs.

Optoelectronics applications of electrodeposited p- and n-type Al2Se3 thin films

In this paper, energy band gaps and electrical conductivity based on aluminum selenide (Al2Se3) thin films are synthesized electrochemically using cathodic deposition technique, with graphite and carbon as cathode and anode, respectively. Synthesis is done at 353 K from an aqueous solution of analytical grade selenium dioxide (SeO2), and aluminum chloride (AlCl2·7H2O). Junctions-based Al2Se3 thin films from a controlled medium of pH 2.0 are deposited on fluorine-doped tin oxide (FTO) substrate using potential voltages varying from 1,000 mV to 1,400 mV and 3 minutes −15 minutes respectively. The films were characterized for optical properties and electrical conductivity using UV-vis and photoelectrochemical cells (PEC) spectroscopy. The PEC reveals a transition in the conduction of the films from p-type to n-type as the potential voltage varies. The energy band gap reduces from 3.2 eV to 2.9 eV with an increase in voltage and 3.3 eV to 2.7 eV with increase in time. These variations indicate successful fabrication of junction-based Al2Se3 thin films with noticeable transition in the conductivity type and energy band gap of the materials. Consequently, the fabricated Al2Se3 can find useful applications in optoelectronic devices.

Determination of the electronic transport in type separated carbon nanotubes thin films doped with gold nanocrystals

We report a systematic theoretical and experimental investigation on the electronic transport evolution in metallic and semiconducting carbon nanotubes thin films enriched by gold nanocrystals. We used an ultra-clean production method of both types of single-walled carbon nanotube thin films with/without gold nanocrystals, which were uniformly dispersed in the whole volume of the thin films, causing a modification of the doping level of the films (verified by Raman spectroscopy). We propose a modification of the electronic transport model with the additional high-temperature features that allow us to interpret the transport within a broader temperature range and that are related to the conductivity type of carbon nanotubes. Moreover, we demonstrate, that the proposed model is also working for thin films with the addition of gold nanocrystals, and only a change of the conductivity level of our samples is observed caused by modification of potential barriers between carbon nanotubes. We also find unusual behavior of doped metallic carbon nanotube thin film, which lowers its conductivity due to doping.