scholarly journals Kinetics and structural evolution of sorbents at high temperatures. Final report, September 1, 1992--August 31, 1993

1993 ◽  
Author(s):  
Liang-Shih Fan ◽  
A.G. Dastidar ◽  
S. Mahuli ◽  
R. Agnihotri

1996 ◽  
Author(s):  
Liang-Shih Fan ◽  
A. Ghosh-Dastidar ◽  
S. Mahuli ◽  
R. Agnihotri


10.2172/64225 ◽  
1995 ◽  
Author(s):  
L.S. Fan ◽  
A. Ghosh-Dastidar ◽  
S. Mahuli ◽  
R. Agnihotri


2008 ◽  
Vol 47 (1) ◽  
pp. 616-619 ◽  
Author(s):  
Saki Kondo ◽  
Kenji Tateishi ◽  
Nobuo Ishizawa


Carbon ◽  
2017 ◽  
Vol 121 ◽  
pp. 426-433 ◽  
Author(s):  
Zhipeng Wang ◽  
Hironori Ogata ◽  
Gan Jet Hong Melvin ◽  
Michiko Obata ◽  
Shingo Morimoto ◽  
...  




2009 ◽  
Vol 27 (06) ◽  
pp. 879 ◽  
Author(s):  
Zhe Wang ◽  
Rong-jun Song ◽  
Xiao-hua Du ◽  
Xiao-yu Meng ◽  
Zhi-wei Jiang ◽  
...  


2001 ◽  
Vol 693 ◽  
Author(s):  
M W Fay ◽  
G Moldovan ◽  
I Harrison ◽  
J C Birbeck ◽  
B T Hughes ◽  
...  

AbstractTiAlTiAu and TiAlPdAu contacts to GaN/AlGaN, rapid thermal annealed at temperatures ranging from 650°C to 950°C, have been investigated using conventional and chemical TEM analysis. Ohmic behaviour was seen for TiAlTiAu contacts annealed at 750°C or higher, but was not observed in TiAlPdAu contacts annealed at up to 950°C. The effect of annealing temperature on the structural evolution of the contact is explained in terms of different extents of interfacial reaction. In particular, the formation of TiN after anneals at high temperatures is required to activate the contact. At anneals of 950°C, TiAlTiAu samples show a structure of TiN grains within an interfacial band, with TiN inclusions into the AlGaN preceded by an Al-Au diffusion front. Inclusion formation and the effect on the contact electrical performance is described.



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