scholarly journals Final report on LDRD : MBE growth and transport properties of carbon-doped high mobility two-dimensional hole systems.

2012 ◽  
Author(s):  
John Louis Reno

2016 ◽  
Vol 108 (9) ◽  
pp. 092103 ◽  
Author(s):  
L. Bockhorn ◽  
A. Velieva ◽  
S. Hakim ◽  
T. Wagner ◽  
E. P. Rugeramigabo ◽  
...  


2011 ◽  
Vol 83 (24) ◽  
Author(s):  
J. D. Watson ◽  
S. Mondal ◽  
G. A. Csáthy ◽  
M. J. Manfra ◽  
E. H. Hwang ◽  
...  


2005 ◽  
Vol 86 (20) ◽  
pp. 202105 ◽  
Author(s):  
S. Schmult ◽  
C. Gerl ◽  
U. Wurstbauer ◽  
C. Mitzkus ◽  
W. Wegscheider




Author(s):  
М.А. Суханов ◽  
А.К. Бакаров ◽  
К.С. Журавлёв

The paper describes the features of the MBE growth process of AlSb / InAs heterostructures with a high-mobility two-dimensional electron gas for UHF transistors with ultra-low power consumption. The main stages of manufacturing transistors based on AlSb / InAs heterostructures are outlined. The drain and transfer characteristics of transistors are presented and discussed.



1989 ◽  
Vol 160 ◽  
Author(s):  
Masanobu Miyao ◽  
Eiichi Murakami ◽  
Hiroyuki Etoh ◽  
Kiyokazu Nakagawa

AbstractFormation and characterization of a new hetero -structure of modulation doped p-Si0.5Ge0.5/Ge/Si1-xGex are comprehensively studied. In the MBE growth, thick Si1-xGex buffer layers are grown incommensurately at high temperature (520°C), and thin Si0.5Ge0.5/Ge layers are grown commensurately at low temperature (≦450°C). The strain field in the Ge channel layers can be precisely controlled by changing the Si composition (1-X) in the Si 1 -xGex buffer layers. As a result, a large energy discontinuity in the valence band (0.17 eV) is realized at the hetero -interface of p-Si0.5Ge0.5/Ge. This enables a high mobility of two -dimensional hole gas (4500 cm2/Vs) at 77 K.



2017 ◽  
Vol 96 (20) ◽  
Author(s):  
Zhao Liu ◽  
Emil J. Bergholtz ◽  
Alessandro Romito ◽  
Dganit Meidan


Nanoscale ◽  
2021 ◽  
Author(s):  
Yinqiao Liu ◽  
Qinxi Liu ◽  
Ying Liu ◽  
Xue Jiang ◽  
Xiaoliang Zhang ◽  
...  

The contributions of spin-phonon coupling (SPC) to spin and thermal transport properties are important in the emerging two-dimensional (2D) magnetic semiconductors and are relevant for the data security and working...



Author(s):  
Haohao Sheng ◽  
Haoxiang Long ◽  
Guanzhen Zou ◽  
Dongmei Bai ◽  
Junting Zhang ◽  
...  


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