Mid-year Project Review on 20210586MFR "On-Machine Probe Measurement and Compensated Cutting For Improved Plutonium Shell Fabrication"

Development of high-precision micro-coordinate measuring machine: Multi-probe measurement system for measuring yaw and straightness motion error of XY linear stage

Precision Engineering ◽

10.1016/j.precisioneng.2011.01.004 ◽

2011 ◽

Vol 35 (3) ◽

pp. 424-430 ◽

Cited By ~ 33

Author(s):

Ping Yang ◽

Tomohiko Takamura ◽

Satoru Takahashi ◽

Kiyoshi Takamasu ◽

Osamu Sato ◽

...

Keyword(s):

High Precision ◽

Measurement System ◽

Coordinate Measuring Machine ◽

Probe Measurement ◽

Linear Stage ◽

Motion Error ◽

Measuring Machine

Imaging of Defect Density Distribution in GaN using Femtosecond Pump-Probe Measurement

2005 Pacific Rim Conference on Lasers & Electro-Optics ◽

10.1109/cleopr.2005.1569592 ◽

2006 ◽

Author(s):

K. Horiuchi ◽

S. Kamata ◽

F. Kannari

Keyword(s):

Density Distribution ◽

Defect Density ◽

Probe Measurement ◽

Pump Probe

Electrostatic probe measurement of low-pressure electronegative SF6 discharges

Thin Solid Films ◽

10.1016/j.tsf.2010.01.048 ◽

2010 ◽

Vol 518 (22) ◽

pp. 6686-6689 ◽

Cited By ~ 10

Author(s):

H.M. Joh ◽

T.H. Chung ◽

K.-S. Chung

Keyword(s):

Low Pressure ◽

Probe Measurement ◽

Electrostatic Probe

A Simple And Low Cost 3-Probe Measurement Technique Using Microstrip Circuits

10.1117/12.978500 ◽

1988 ◽

Author(s):

Kai Chang ◽

Ming-Yi Li ◽

Thomas Sauter

Keyword(s):

Measurement Technique ◽

Low Cost ◽

Probe Measurement

Flying Probe measurement accuracy improvement by external LCR integration

Measurement ◽

10.1016/j.measurement.2022.110703 ◽

2022 ◽

pp. 110703

Author(s):

Raul Ionel ◽

Liliana Mâţiu-Iovan

Keyword(s):

Measurement Accuracy ◽

Probe Measurement ◽

Accuracy Improvement

Error reduction, evaluation and correction for the intrusive optical four-sensor probe measurement in multi-dimensional two-phase flow

International Journal of Heat and Mass Transfer ◽

10.1016/j.ijheatmasstransfer.2006.01.054 ◽

2008 ◽

Vol 51 (3-4) ◽

pp. 882-895 ◽

Cited By ~ 26

Author(s):

Xiuzhong Shen ◽

Kaichiro Mishima ◽

Hideo Nakamura

Keyword(s):

Two Phase Flow ◽

Error Reduction ◽

Probe Measurement ◽

Phase Flow ◽

Two Phase ◽

Sensor Probe

Effect of magnetic field on dust charging and corresponding probe measurement

Physics of Plasmas ◽

10.1063/1.4935900 ◽

2015 ◽

Vol 22 (11) ◽

pp. 113704 ◽

Cited By ~ 5

Author(s):

D. Kalita ◽

B. Kakati ◽

B. K. Saikia ◽

M. Bandyopadhyay ◽

S. S. Kausik

Keyword(s):

Magnetic Field ◽

Probe Measurement ◽

Dust Charging

Structural and Conductive Changes of Alumina Ceramics and Silicon Crystal Implanted with High-Flux Ti Ion

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.107.115 ◽

2005 ◽

Vol 107 ◽

pp. 115-118

Author(s):

Xue Mei Wu ◽

D.X. Li ◽

M. Yu ◽

Ji Zhong Zhang

Keyword(s):

Silicon Crystal ◽

Probe Measurement ◽

Experimental Results ◽

Irradiation Damage ◽

High Flux ◽

Alumina Ceramics

95% Al2O3 ceramics and Si <100> crystal were implanted by Ti ion in a MEVVA implanter. The influence of implantation parameters was studied by varying ion fluence. The samples were implanted by 80 keV Ti ion with fluences from 1 x1015 to 1 x 1018 ions/cm2, respectively. The samples were investigated by SEM, SAM, and four-probe measurement. Differentmorphologies were observed on the surfaces of the samples due to irradiation damage, and clearly related to implantation parameters. XRD spectra confirm formation of titanium silicides on the surfaces of Si samples with ion fluences equal to or high than 1x1015 ions/cm2. The experimental results suggest that it is possible to synthesise titanium silicides by using a MEVVA implanter.

Pump–probe measurement of lifetime engineering in SiGe quantum wells below the optical phonon energy

Semiconductor Science and Technology ◽

10.1088/0268-1242/20/10/l02 ◽

2005 ◽

Vol 20 (10) ◽

pp. L50-L52 ◽

Cited By ~ 7

Author(s):

C R Pidgeon ◽

P J Phillips ◽

D Carder ◽

B N Murdin ◽

T Fromherz ◽

...

Keyword(s):

Quantum Wells ◽

Optical Phonon ◽

Probe Measurement ◽

Phonon Energy ◽

Pump Probe ◽

Sige Quantum Wells

Investigation of Spin-on Dopants and Curing Temperature Effect on Dopant Activation

Applied Physics Research ◽

10.5539/apr.v11n4p11 ◽

2019 ◽

Vol 11 (4) ◽

pp. 11

Author(s):

Bhavink Patel ◽

Martin Saporito ◽

Runye Cui ◽

Khaled Malallah ◽

Mohammad Alsubaiei ◽

...

Keyword(s):

Temperature Effect ◽

Sheet Resistance ◽

Measurement Method ◽

Probe Measurement ◽

Curing Temperature ◽

Silicon Substrates ◽

Dopant Activation ◽

Baking Process

Spin-on dopant technique has been investigated in the paper. The boron and phosphorus were used as p- and n-type dopant sources and were deposited on silicon substrates, followed by the baking process to evaporate the solvents from spin-on dopant layers. The standard drive-in process was applied to diffuse and activate the dopants. The curing temperature varied from 150 to 200 oC to investigate the temperature effect on dopant activation. It is suggested that for our selected spin-on dopant sources, the curing temperature and time of 175 oC and 60 minutes would lead to the best result of dopant activation during drive-in process, evidenced by the lowest sheet resistance, which was measured using four-point probe measurement method. 