The paper analyses the possibility to reduce the sensitivity of silicon integrated circuits (ICs) to single radiation effects by means of radiation-thermal treatment including irradiation in charged particle accelerators and subsequent low-temperature heat treatment. It is shown that reduction in sensitivity to single radiation effects is provided by formation of thermostable recombination centers in semiconductor IC structure in necessary concentrations. At the same time a decrease in primary photocurrent generated by heavy charged particles or high-energy protons, reduction in transfer coefficients of parasitic bipolar transistors forming thyristor structures, reduction in carrier avalanche multiplication coefficients at high electric field strengths can be provided. Radiationthermal treatment can be introduced in the manufacturing process of ICs of various classes at the end of the manufacturing cycle and does not require correction of the basic technology. A possible undesirable growth of inverse currents and preservation of values of other electrical parameters within acceptable values when using radiation-thermal treatment is provided by choosing optimal modes of irradiation and annealing which are established in the course of experimental tests. The calculated evaluation has shown that using radiation-thermal treatment in the technology of IC fabrication can provide a decrease in the effective collection length of non-equilibrium charge carriers generated under the influence of single radiation effects by at least 10 times which allows considering radiation-thermal treatment as an effective technological tool to suppress the sensitivity to single radiation effects.
High energy atomic chemistry and chemical radiation effects. Progress report, January 1, 1973--December 31, 1973