Improvement of the Lifetime of a GaAs-Based Laser on Si with a Strained Quantum-Well Structure.

The Review of Laser Engineering ◽

10.2184/lsj.22.977 ◽

1994 ◽

Vol 22 (12) ◽

pp. 977-984

Author(s):

Yoshiaki HASEGAWA ◽

Takashi EGAWA ◽

Takashi JIMBO ◽

Masayoshi UMENO

Keyword(s):

Quantum Well ◽

Quantum Well Structure ◽

Strained Quantum Well

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Potential chirp‐free characteristics (negative chirp parameter) in electroabsorption modulation using a wide tensile‐strained quantum well structure

Applied Physics Letters ◽

10.1063/1.115795 ◽

1996 ◽

Vol 68 (22) ◽

pp. 3114-3116 ◽

Author(s):

Takayuki Yamanaka ◽

Koichi Wakita ◽

Kiyoyuki Yokoyama

Keyword(s):

Quantum Well ◽

Quantum Well Structure ◽

Strained Quantum Well

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Theoretical Analysis of Direct Transition in SiGe/GeSn Strained Quantum Well Structure by Finite Difference Method

Springer Proceedings in Physics - Advances in Optical Science and Engineering ◽

10.1007/978-81-322-2367-2_76 ◽

2015 ◽

pp. 613-619 ◽

Author(s):

Prakash Pareek ◽

Mukul K. Das

Keyword(s):

Finite Difference ◽

Finite Difference Method ◽

Theoretical Analysis ◽

Quantum Well ◽

Difference Method ◽

Direct Transition ◽

Quantum Well Structure ◽

Strained Quantum Well

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Magnetotransport and luminescence measurements in ann‐type selectively doped InGaAs/GaAs strained quantum well structure

Applied Physics Letters ◽

10.1063/1.97859 ◽

1987 ◽

Vol 50 (19) ◽

pp. 1370-1372 ◽

Author(s):

I. J. Fritz ◽

J. E. Schirber ◽

E. D. Jones ◽

T. J. Drummond ◽

L. R. Dawson

Keyword(s):

Quantum Well ◽

Quantum Well Structure ◽

Strained Quantum Well

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Long wavelength determination of a strained quantum well structure based on GaxIn1−x−yAsySb1−y /GaSb for gas detection

2011 Saudi International Electronics, Communications and Photonics Conference (SIECPC) ◽

10.1109/siecpc.2011.5876979 ◽

2011 ◽

Author(s):

A. Aissat ◽

S. Nacer ◽

H. Aliane ◽

J. P. Vilcot

Keyword(s):

Quantum Well ◽

Gas Detection ◽

Long Wavelength ◽

Quantum Well Structure ◽

Strained Quantum Well

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Multi-wafer MOCVD growth of highly uniform InGaAsP strained quantum well structure for low threshold 1.3 μm lasers

1993 (5th) International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.1993.380667 ◽

2002 ◽

Author(s):

K. Mori ◽

M. Takemi ◽

T. Takiguchi ◽

K. Goto ◽

T. Nishimura ◽

...

Keyword(s):

Quantum Well ◽

Quantum Well Structure ◽

Mocvd Growth ◽

Low Threshold ◽

Strained Quantum Well ◽

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Molecular beam epitaxy of ZnCdSe/ZnSe strained quantum-well structures on GaAs(1 1 1)A substrates and piezoelectric properties

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00726-4 ◽

1998 ◽

Vol 184-185 (1-2) ◽

pp. 723-727

Author(s):

N Matsumura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Piezoelectric Properties ◽

Quantum Well Structures ◽

Strained Quantum Well

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Modulation-doped (AlGa)As/GaAs quantum well structure with high electron sheet density

Electronics Letters ◽

10.1049/el:19890770 ◽

1989 ◽

Vol 25 (17) ◽

pp. 1147

Author(s):

A.L. Powell ◽

J.S. Roberts ◽

P.I. Rockett ◽

T.J. Foster ◽

L. Eaves

Keyword(s):

Quantum Well ◽

High Electron ◽

Quantum Well Structure ◽

Electron Sheet ◽

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High power InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers grown by two step MOVPE

Electronics Letters ◽

10.1049/el:19930165 ◽

1993 ◽

Vol 29 (2) ◽

pp. 240 ◽

Author(s):

Y.K. Sin ◽

H. Horikawa ◽

T. Kamijoh

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Buried Heterostructure ◽

Strained Quantum Well

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NIR resonant-cavity-enhanced InP/InGaAs strained quantum well interband photodetector

10.1117/12.344568 ◽

1999 ◽

Author(s):

Serguei Jourba ◽

Marie-Paule Besland ◽

Michel Gendry ◽

Michel Garrigues ◽

Jean Louis Leclercq ◽

...

Keyword(s):

Quantum Well ◽

Resonant Cavity ◽

Strained Quantum Well

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Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.31.95 ◽

2007 ◽

Vol 31 ◽

pp. 95-97

Author(s):

B. Dong ◽

W.J. Fan ◽

Y.X. Dang

Keyword(s):

Band Structure ◽

Quantum Well ◽

Optical Gain ◽

Band Structures ◽

Quantum Well Laser ◽

Suitable Combination ◽

Gain Spectra ◽

Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

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