scholarly journals Взаимодействие электромагнитной H-волны с тонкой металлической пленкой на диэлектрической подложке в случае анизотропной поверхности Ферми металла

2019 ◽  
Vol 127 (8) ◽  
pp. 306
Author(s):  
И.А. Кузнецова ◽  
Д.Н. Романов ◽  
А.А. Юшканов
Keyword(s):  
Fermi Surface ◽  
Effective Mass ◽  
Free Path ◽  
Electromagnetic Waves ◽  
Metal Film ◽  
Mean Free Path ◽  
Thin Metal Film ◽  
Thin Metal ◽  
Reflection Coefficients ◽  
Conduction Electrons

The interaction of electromagnetic H-waves with the thin metal film subject to the shape of the ellipsoidal Fermi surface and a constant mean free path of electrons for various angles of incidence of the electromagnetic waves of theta and different from each other of the coefficients of specularity of q1 and q2 in the reflection of electrons from surfaces of the film is calculated. The metal film is enclosed between two media with permittivity ε1 and ε2. The behavior of reflection coefficients R, passage T and absorption A from the effective mass of conduction electrons is analyzed.

Electron mean free path in a thin metal film

1978 ◽  
Vol 49 (6) ◽  
pp. 3625-3626 ◽  
Author(s):  
Ijaz‐ur‐Rahman ◽  
K. Ahmed
Keyword(s):  
Free Path ◽  
Metal Film ◽  
Mean Free Path ◽  
Thin Metal Film ◽  
Thin Metal ◽  
Electron Mean Free Path

scholarly journals The influence of Fermi surface anisotropy and the charge carrier surface scattering kinetics on the electrical conductivity of a thin metal film in the view of the quantum size effect

2021 ◽  
Vol 2056 (1) ◽  
pp. 012018
Author(s):  
I A Kuznetsova ◽  
O V Savenko ◽  
D N Romanov
Keyword(s):  
Electrical Conductivity ◽  
Fermi Surface ◽  
Size Effect ◽  
Metal Film ◽  
Thin Metal Film ◽  
Quantum Size Effect ◽  
Thin Metal ◽  
Von Neumann ◽  
Quantum Equation ◽  
Quantum Size

Abstract The electrical conductivity of a thin metal film in an alternating electric field is calculated considering the quantum size effect. The Fermi surface of the metal has the shape of an ellipsoid of rotation, the main axis of which is parallel to the plane of the film. The quantum kinetic equation obtained from the von Neumann equation (the Liouville quantum equation) is solved. The Soffer model is used as the boundary conditions for the distribution function. The dependence of the electrical conductivity on the film thickness is analyzed. A comparison is made with experimental data on the electrical conductivity of bismuth thin films.

scholarly journals Interaction of Electromagnetic H-wave with the thin Metal Film is Located on the Dielectric Substrate

2015 ◽  
Vol 16 (2) ◽  
pp. 253-256 ◽  
Author(s):  
А.І. Utkin ◽  
А.А. Yushkanov
Keyword(s):  
Reflection Coefficient ◽  
Absorption Coefficient ◽  
Frequency Dependence ◽  
Transmission Coefficient ◽  
Metal Film ◽  
Dielectric Permeability ◽  
Dielectric Substrate ◽  
Thin Metal Film ◽  
Thin Metal ◽  
Reflection Coefficients

Interaction of electromagnetic H-wave with thin metal film is located between two dielectric environments ε1, ε2 in the case of different incident angles of H-wave θ and in the case of different reflection coefficients q1 и q2 is calculated in this article. Behavior analysis of reflection coefficient R, transmission coefficient T and absorption coefficient A in the case of its frequency dependence y and variation dielectric permeability of its environments is done.

Self-Ordered Vicinal-Surface-Like Nanosteps at the Thin Metal-Film/Substrate Interface

2012 ◽  
Vol 116 (22) ◽  
pp. 12149-12155 ◽  
Author(s):  
Shirly Borukhin ◽  
Cecile Saguy ◽  
Maria Koifman ◽  
Boaz Pokroy
Keyword(s):  
Metal Film ◽  
Thin Metal Film ◽  
Thin Metal ◽  
Vicinal Surface ◽  
Substrate Interface ◽  
Film Substrate

Development of Thin Metal Film Deposition Process for the Intravascular Catheter

1999 ◽  
Author(s):  
Seok Chung ◽  
Jun Keun Chang ◽  
Dong Chul Han
Keyword(s):  
Metal Film ◽  
Three Dimensional ◽  
Deposition Process ◽  
Medical Application ◽  
Thin Metal Film ◽  
Film Deposition ◽  
Thin Metal ◽  
Mems Devices ◽  
Sensors And Actuators ◽  
Custom Made

Abstract To make some MF.MS devices such as sensors and actuators be useful in the medical application, it is required to integrate this devices with power or sensor lines and to keep the hole devices biocompatible. Integrating micro machined sensors and actuators with conventional copper lines is incompatible because the thin copper lines are not easy to handle in the mass production. To achieve the compatibility of wiring method between MEMS devices, we developed the thin metal film deposition process that coats micropattered thin copper films on the non silicon-wafer substrate. The process was developed with the custom-made three-dimensional thin film sputter/evaporation system. The system consists of process chamber, two branch chambers, substrate holder unit and linear/rotary motion feedthrough. Thin metal film was deposited on the biocompatible polymer, polyurethane (PellethaneR) and silicone, catheter that is 2 mm in diameter and 1,000 mm in length. We deposited Cr/Cu and Ti/Cu layer and made a comparative study of the deposition processes, sputtering and evaporation. The temperature of both the processes were maintained below 100°C, for the catheter not melting during the processes. To use the films as signal lines connect the signal source to the actuator on the catheter tip, we machined the films into desired patterns with the eximer laser. In this paper, we developed the thin metal film deposition system and processes for the biopolymeric substrate used in the medical MEMS devices.

Evaluation of thin metal film thickness from light attenuation and multi-reflection effects on micro-Raman response

2013 ◽  
Vol 536 ◽  
pp. 142-146 ◽  
Author(s):  
C. Camerlingo ◽  
M.P. Lisitskiy ◽  
L. De Stefano ◽  
I. Rea ◽  
I. Delfino ◽  
...  
Keyword(s):  
Film Thickness ◽  
Metal Film ◽  
Light Attenuation ◽  
Thin Metal Film ◽  
Thin Metal ◽  
Raman Response
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