Эффект спиновой аккумуляции в эпитаксиальной структуре Fe-=SUB=-3-=/SUB=-Si/n-Si и влияние на него электрического смещения

The electrical injection of a spin-polarized current into silicon was demonstrated in the Fe3Si/n-Si epitaxial structure. The spin accumulation effect was studied by measuring local and nonlocal voltage signals in a specially prepared 4-terminal device. The detected effect of electrical bias on the spin signal is discussed and compared with other results reported for ferromagnet/semiconductor structures.

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Chiral Magneto-Electrochemistry

Magnetochemistry ◽

10.3390/magnetochemistry4030036 ◽

2018 ◽

Vol 4 (3) ◽

pp. 36 ◽

Cited By ~ 5

Author(s):

Anup Kumar ◽

Prakash Mondal ◽

Claudio Fontanesi

Keyword(s):

Magnetic Field ◽

Experimental Studies ◽

Spin Accumulation ◽

Chiral Molecules ◽

Electrochemical System ◽

Ferromagnetic Electrodes ◽

Spin Polarized ◽

The Magnetic Field ◽

Research Domain

Magneto-electrochemistry (MEC) is a unique paradigm in science, where electrochemical experiments are carried out as a function of an applied magnetic field, creating a new horizon of potential scientific interest and technological applications. Over time, detailed understanding of this research domain was developed to identify and rationalize the possible effects exerted by a magnetic field on the various microscopic processes occurring in an electrochemical system. Notably, until a few years ago, the role of spin was not taken into account in the field of magneto-electrochemistry. Remarkably, recent experimental studies reveal that electron transmission through chiral molecules is spin selective and this effect has been referred to as the chiral-induced spin selectivity (CISS) effect. Spin-dependent electrochemistry originates from the implementation of the CISS effect in electrochemistry, where the magnetic field is used to obtain spin-polarized currents (using ferromagnetic electrodes) or, conversely, a magnetic field is obtained as the result of spin accumulation.

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Eﬀective modulation of spin accumulation using a ferromagnetic/nonmagnetic bilayer spin channel

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ac34aa ◽

2021 ◽

Author(s):

Taisei Ariki ◽

Tatsuya Nomura ◽

Kohei Ohnishi ◽

Takashi Kimura

Keyword(s):

Spin Injection ◽

Spin Valve ◽

Transverse Spin ◽

Spin Accumulation ◽

Spin Channel ◽

Relative Angle ◽

Channel Layer ◽

Spin Polarized ◽

Resistance Model ◽

Large Spin

Abstract A lateral spin valve consisting of highly spin-polarized CoFeAl electrodes with a CoFeAl/Cu bilayer spin channel has been developed. Despite a large spin absorption into the CoFeAl capping channel layer, an eﬃcient spin injection and detection using the CoFeAl electrodes enable us to observe a clear spin valve signal. We demonstrate that the nonlocal spin accumulation signal is signiﬁcantly modulated depending on the relative angle of the magnetizations between the spin injector and absorber. The observed modulation phenomena is explained by the longitudinal and transverse spin absorption eﬀects into the CoFeAl channel layer with the spin resistance model.

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