scholarly journals Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor

2009 ◽  
Vol 102 (3) ◽  
Author(s):  
M. Tran ◽  
H. Jaffrès ◽  
C. Deranlot ◽  
J.-M. George ◽  
A. Fert ◽  
...  
2018 ◽  
Vol 4 (3) ◽  
pp. 36 ◽  
Author(s):  
Anup Kumar ◽  
Prakash Mondal ◽  
Claudio Fontanesi

Magneto-electrochemistry (MEC) is a unique paradigm in science, where electrochemical experiments are carried out as a function of an applied magnetic field, creating a new horizon of potential scientific interest and technological applications. Over time, detailed understanding of this research domain was developed to identify and rationalize the possible effects exerted by a magnetic field on the various microscopic processes occurring in an electrochemical system. Notably, until a few years ago, the role of spin was not taken into account in the field of magneto-electrochemistry. Remarkably, recent experimental studies reveal that electron transmission through chiral molecules is spin selective and this effect has been referred to as the chiral-induced spin selectivity (CISS) effect. Spin-dependent electrochemistry originates from the implementation of the CISS effect in electrochemistry, where the magnetic field is used to obtain spin-polarized currents (using ferromagnetic electrodes) or, conversely, a magnetic field is obtained as the result of spin accumulation.


Author(s):  
Nafeesa Rahman ◽  
Rachid Sbiaa

The transfer of spin angular momentum from a spin polarized current provides an efficient way of reversing the magnetization direction of the free layer of the magnetic tunnel junction (MTJ), and while faster reversal will reduce the switching energy, this in turn will lead to low power consumption. In this work, we propose a design where a spin torque oscillator (STO) is integrated with a conventional magnetic tunnel junction (MTJ) which will assist in the ultrafast reversal of the magnetization of the free layer of the MTJ. The structure formed (MTJ stacked with STO), will have the free layer of the MTJ sandwiched between two spin polarizer layers, one with a fixed magnetization direction perpendicular to film plane (main static polarizer) and the other with an oscillatory magnetization (dynamic polarizer). The static polarizer is the fixed layer of the MTJ itself and the dynamic polarizer is the free layer of the STO.


Author(s):  
Taisei Ariki ◽  
Tatsuya Nomura ◽  
Kohei Ohnishi ◽  
Takashi Kimura

Abstract A lateral spin valve consisting of highly spin-polarized CoFeAl electrodes with a CoFeAl/Cu bilayer spin channel has been developed. Despite a large spin absorption into the CoFeAl capping channel layer, an efficient spin injection and detection using the CoFeAl electrodes enable us to observe a clear spin valve signal. We demonstrate that the nonlocal spin accumulation signal is significantly modulated depending on the relative angle of the magnetizations between the spin injector and absorber. The observed modulation phenomena is explained by the longitudinal and transverse spin absorption effects into the CoFeAl channel layer with the spin resistance model.


2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
G. D. Demin ◽  
K. A. Zvezdin ◽  
A. F. Popkov

Spin caloritronics opens up a wide range of potential applications, one of which can be the thermoelectric rectification of a microwave signal by spin-diode structures. The bolometric properties of a spin-torque diode based on a magnetic tunnel junction (MTJ) in the presence of a thermal gradient through a tunnel junction are discussed. Theoretical estimates of the static and dynamic components of the microwave sensitivity of the spin-torque diode, related to thermoelectric tunnel magneto-Seebeck effect and the thermal transfer of spin angular momentum in the MTJ under nonuniform heating, are presented. Despite the fact that the thermal contribution to the microwave sensitivity of the spin-torque diode is found to be relatively small in relation to the rectification effect related to the modulation of the MTJ resistance by a microwave spin-polarized current, nevertheless, the considered bolometric effect can be successfully utilized in some real-world microwave applications.


2006 ◽  
Author(s):  
Hiromi Kashiwaya ◽  
Kaori Ikeda ◽  
Bambang Prijamboedi ◽  
Satoshi Kashiwaya ◽  
Akira Sugimoto ◽  
...  

2008 ◽  
Vol 92 (17) ◽  
pp. 172104 ◽  
Author(s):  
Feng Chi ◽  
Jun Zheng ◽  
Lian-Liang Sun

2021 ◽  
Author(s):  
Luding Wang ◽  
Houyi Cheng ◽  
Pingzhi Li ◽  
Yang Liu ◽  
Youri van Hees ◽  
...  

Abstract Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture. However, conventional switching mechanisms of such devices are fundamentally hindered by spin polarized currents, either spin transfer torque or spin orbit torque with spin precession time limitation and excessive power dissipation. These physical constraints significantly stimulate the advancement of modern spintronics. Here, we report an optospintronic tunnel junction using a photonic-spintronic combination. This composite device incorporates an all-optically switchable Co/Gd bilayer coupled to a CoFeB/MgO-based perpendicular magnetic tunnel junction by the Ruderman-Kittel-Kasuya-Yosida interaction. A picosecond all-optical operation of the optospintronic tunnel junction is explicitly confirmed by time-resolved measurements. Moreover, the device shows a considerable tunnel magnetoresistance and thermal stability. This proof-of-concept device represents an essential step towards ultrafast photonic memories with THz data access, as well as ultralow power consumption.


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