Терагерцевая генерация в эпитаксиальных пленках InAs
Keyword(s):
We present the results of terahertz generation studies under excitation via femtosecond lasers pulses epitaxial films of InAs, which were synthesized on semi-insulating and highly doped GaAs substrates. It is shown that a terahertz emitter based on epitaxial InAs film grown on a heavily doped GaAs n-type substrate, has the same terahertz generation efficiency as the InAs-film emitter grown on a semi-isolating GaAs substrate, but it has a significantly better spectral resolution, which is mainly determined by the parameters of the optical delay line and the femtosecond laser’s stability.
1978 ◽
Vol 25
(6)
◽
pp. 360-364
◽
Keyword(s):
2021 ◽
Vol 64
(3)
◽
pp. 415-419