Терагерцевая генерация в эпитаксиальных пленках InAs

We present the results of terahertz generation studies under excitation via femtosecond lasers pulses epitaxial films of InAs, which were synthesized on semi-insulating and highly doped GaAs substrates. It is shown that a terahertz emitter based on epitaxial InAs film grown on a heavily doped GaAs n-type substrate, has the same terahertz generation efficiency as the InAs-film emitter grown on a semi-isolating GaAs substrate, but it has a significantly better spectral resolution, which is mainly determined by the parameters of the optical delay line and the femtosecond laser’s stability.

Free-space optical delay line using space-time wave packets

An optical buffer featuring a large delay-bandwidth-product—a critical component for future all-optical communications networks—remains elusive. Central to its realization is a controllable inline optical delay line, previously accomplished via engineered dispersion in optical materials or photonic structures constrained by a low delay-bandwidth product. Here we show that space-time wave packets whose group velocity is continuously tunable in free space provide a versatile platform for constructing inline optical delay lines. By spatio-temporal spectral-phase-modulation, wave packets in the same or in different spectral windows that initially overlap in space and time subsequently separate by multiple pulse widths upon free propagation by virtue of their different group velocities. Delay-bandwidth products of ~100 for pulses of width ~1 ps are observed, with no fundamental limit on the system bandwidth.