scholarly journals Atomic and Electronic Structure of Diamond Grain Boundaries

Materia Japan ◽  
1998 ◽  
Vol 37 (12) ◽  
pp. 1007-1007
Author(s):  
Hideki Ichinose ◽  
Megumi Nakanose
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Diamond Grain ◽  
Atomic And Electronic Structure

Atomic and Electronic Structure Analysis of Active and Inactive Diamond Grain Boundaries

2004 ◽  
Vol 10 (S02) ◽  
pp. 296-297
Author(s):  
Hideki Ichinose ◽  
Hidetaka Sawada ◽  
Naoki Takayanagi
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Structure Analysis ◽  
Diamond Grain ◽  
Atomic And Electronic Structure

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Atomic and Electronic Structure of Boron-Doped Diamond Grain Boundaries Studied by Arhvtem and ab-Initio Calculation

2003 ◽  
Vol 764 ◽  
Author(s):  
Hiroyuki Togawa ◽  
Hideki Ichinose
Keyword(s):  
Ab Initio ◽  
Grain Boundaries ◽  
Ab Initio Calculation ◽  
Structure Model ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Diamond Grain ◽  
Electron Energy Loss ◽  
Atomic And Electronic Structure

AbstractAtomic resolution high-voltage transmission electron microscopy and electron energy loss spectroscopy were performed on grain boundaries of boron-doped diamond, cooperated with the ab-initio calculation. Segregated boron in the {112}∑3 boundary was caught by the EELS spectra. The change in atomic structure of the segregated boundary was successfully observed from the image by ARHVTEM. Based on the ARHVTEM image, a segregted structure model was proposed.

scholarly journals The Atomic and Electronic Structure of 0° and 60° Grain Boundaries in MoS2

2019 ◽  
Vol 7 ◽  
Author(s):  
Terunobu Nakanishi ◽  
Shoji Yoshida ◽  
Kota Murase ◽  
Osamu Takeuchi ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Atomic And Electronic Structure

Atomic and electronic structure of grain boundaries in crystalline organic semiconductors

2013 ◽  
Vol T157 ◽  
pp. 014061
Author(s):  
Marko Lj Mladenović ◽  
Nenad Vukmirović ◽  
Igor Stanković
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Organic Semiconductors ◽  
Atomic And Electronic Structure

scholarly journals Atomic and Electronic Structure of Wide Gap Semiconductor Grain Boundaries

Materia Japan ◽  
2004 ◽  
Vol 43 (12) ◽  
pp. 984-984
Author(s):  
Hideki Ichinose ◽  
Eriko Takuma ◽  
Hidetaka Sawada
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Wide Gap ◽  
Atomic And Electronic Structure

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

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