Excimer Laser Crystallization Processes of Amorphous Silicon Thin Films by Using Molecular-dynamics Simulations

ABSTRACTWe have performed molecular-dynamics simulations of heating, melting and recrystallization processes in amorphous silicon (a-Si) thin films deposited on glass during excimer laser annealing. By partially heating the a-Si surface region with 2 nm depth and removing thermal energy from the bottom of the glass substrate, a steady-state temperature profile was obtained in the a-Si layer with the thickness of 15 nm and only the surface region was melted. It was found that nucleation predominantly occurred in the a-Si region as judged by the coordination numbers and diffusion constants of atoms in the region. The results suggest that nucleation occurs in unmelted residual a-Si region during the laser irradiation and then crystal growth proceeds toward liquid Si region under the near-complete melting condition.

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Selective Area Excimer‐Laser Crystallization of Amorphous Silicon Thin Films

Journal of The Electrochemical Society ◽

10.1149/1.1392681 ◽

1999 ◽

Vol 146 (12) ◽

pp. 4605-4610 ◽

Cited By ~ 2

Author(s):

John Viatella ◽

Seung‐Mahn Lee ◽

Rajiv K. Singh

Keyword(s):

Thin Films ◽

Amorphous Silicon ◽

Excimer Laser ◽

Laser Crystallization ◽

Silicon Thin Films ◽

Selective Area ◽

Excimer Laser Crystallization

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The Mechanism of Amorphous Silicon Thin Films Using XeF Excimer Laser Crystallization

Proceedings of the 35th International MATADOR Conference ◽

10.1007/978-1-84628-988-0_6 ◽

2007 ◽

pp. 25-28

Author(s):

C. C. Kuo ◽

W. C. Yeh ◽

C. P. Hsiao ◽

J. Y. Jeng

Keyword(s):

Thin Films ◽

Amorphous Silicon ◽

Excimer Laser ◽

Laser Crystallization ◽

Silicon Thin Films ◽

Excimer Laser Crystallization

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A Novel Double-Pulse Excimer-Laser Crystallization Method of Silicon Thin-Films

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.3976 ◽

1995 ◽

Vol 34 (Part 1, No. 8A) ◽

pp. 3976-3981 ◽

Cited By ~ 7

Author(s):

Ryoichi Ishihara ◽

Masakiyo Matsumura

Keyword(s):

Thin Films ◽

Excimer Laser ◽

Double Pulse ◽

Laser Crystallization ◽

Silicon Thin Films ◽

Pulse Excimer Laser ◽

Crystallization Method ◽

Excimer Laser Crystallization

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Excimer Laser Crystallization of Nanocrystalline Silicon Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1120-1121.361 ◽

2015 ◽

Vol 1120-1121 ◽

pp. 361-368

Author(s):

Li Jie Deng ◽

Wei He ◽

Zheng Ping Li

Keyword(s):

Thin Films ◽

Energy Density ◽

Excimer Laser ◽

Silicon Film ◽

Threshold Energy ◽

Nanocrystalline Silicon ◽

Lateral Growth ◽

Laser Crystallization ◽

Silicon Thin Films ◽

Excimer Laser Crystallization

Nanocrystalline silicon (nc-Si) thin film on glass substrate is subjected to excimer laser crystallized by varying the laser energy density in the range of 50~600 mJ/cm2. The effect of excimer laser crystallization on the structure of silicon film is investigated using Raman spectroscopy, X-ray diffraction, atomic force microscopy and scanning electron microscopy. The results show that polycrystalline silicon thin films can be obtained by excimer laser crystallization of nc-Si films. A laser threshold energy density of 200 mJ/cm2 is estimated from the change of crystalline fraction and surface roughness of the treated films. The growth of grain is observed and the crystallization mechanism is discussed based on the super lateral growth model. The nanocrystalline silicon grains in the films act as seeds for lateral growth to large grains.

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