A W-band SiGe BiCMOS I/Q Receiver with Tunable Conversion Gain for Radar Applications

In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only −7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.

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A 10 mW LNA with Temperature Compensation for 24 GHz Radar Applications in SiGe BiCMOS

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts48439.2020.9392906 ◽

2020 ◽

Author(s):

Vadim Issakov ◽

Andreas Werthof

Keyword(s):

Temperature Compensation ◽

Sige Bicmos ◽

Radar Applications ◽

24 Ghz

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A W-band LNA in 0.18-μm SiGe BiCMOS

Proceedings of 2010 IEEE International Symposium on Circuits and Systems ◽

10.1109/iscas.2010.5537464 ◽

2010 ◽

Cited By ~ 3

Author(s):

Leland Gilreath ◽

Vipul Jam ◽

Payam Heydan

Keyword(s):

W Band ◽

Sige Bicmos

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A single-chip W-band transceiver with front-end switching receiver for FMCW radar applications

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers ◽

10.1109/mcs.1995.470952 ◽

2002 ◽

Cited By ~ 9

Author(s):

D.C.W. Lo ◽

K.W. Chang ◽

R. Lin ◽

E.W. Lin ◽

H. Wang ◽

...

Keyword(s):

Single Chip ◽

Fmcw Radar ◽

Front End ◽

W Band ◽

Radar Applications

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A 6 kV ESD-Protected Low-Power 24 GHz LNA for Radar Applications in SiGe BiCMOS

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts.2018.8550914 ◽

2018 ◽

Cited By ~ 2

Author(s):

Vadim Issakov ◽

Sebastian Kehl-Waas ◽

Radu Ciocoveanu ◽

Werner Simburger ◽

Angelika Geiselbrechtinger

Keyword(s):

Low Power ◽

Sige Bicmos ◽

Radar Applications ◽

24 Ghz

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A 60-GHz SiGe BiCMOS Monostatic Transceiver for FMCW Radar Applications

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2017.2769049 ◽

2017 ◽

Vol 65 (12) ◽

pp. 5309-5323 ◽

Cited By ~ 10

Author(s):

Efe Ozturk ◽

Dieter Genschow ◽

Uroschanit Yodprasit ◽

Berk Yilmaz ◽

Dietmar Kissinger ◽

...

Keyword(s):

60 Ghz ◽

Fmcw Radar ◽

Sige Bicmos ◽

Radar Applications

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A SiGe BiCMOS W-Band Single-Chip Frequency Extension Module for VNAs

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2019.2948331 ◽

2020 ◽

Vol 68 (1) ◽

pp. 211-221 ◽

Cited By ~ 1

Author(s):

Esref Turkmen ◽

Yasar Gurbuz

Keyword(s):

Single Chip ◽

W Band ◽

Sige Bicmos

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W-band voltage-controlled oscillator design in 130 nm SiGe BiCMOS technology

ITM Web of Conferences ◽

10.1051/itmconf/20193001006 ◽

2019 ◽

Vol 30 ◽

pp. 01006

Author(s):

Alexander Kozhemyakin ◽

Ivan Kravchenko

Keyword(s):

Power Consumption ◽

Output Power ◽

Design Flow ◽

Voltage Controlled Oscillator ◽

Automotive Radar ◽

W Band ◽

Bicmos Technology ◽

Sige Bicmos ◽

Fundamental Oscillation ◽

Simulation Results

The paper presents design flow and simulation results of the W-band fundamental voltage-controlled oscillator in 0.13 μm SiGe BiCMOS technology for an automotive radar application. Oscillator provides fundamental oscillation range of 76.8 GHz to 81.2 GHz. According to simulation results phase noise is –89.3 dBc/Hz at 1 MHz offset, output power is –5.6 dBm and power consumption is 39 mW from 3.3 V source.

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