scholarly journals INDUCED ELECTROCHEMICAL REDUCTION OF NITRATES SPECIES ON INTERFACE OF Pt/MWCNTs PREPARED BY VAPOR-PHASE IMPREGNATION-DECOMPOSITION METHOD

Author(s):  
E. Torres Santillan ◽  
2010 ◽  
Vol 495 (2) ◽  
pp. 458-461 ◽  
Author(s):  
C. Encarnación Gómez ◽  
J.R. Vargas García ◽  
J.A. Toledo Antonio ◽  
M.A. Cortes Jacome ◽  
C. Ángeles Chávez

1987 ◽  
Vol 29 (1) ◽  
pp. 107-115 ◽  
Author(s):  
Satoshi Sato ◽  
Shin Hasebe ◽  
Hiroaki Sakurai ◽  
Kazuo Urabe ◽  
Yusuke Izumi

Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.


Optimization ◽  
1975 ◽  
Vol 6 (4) ◽  
pp. 549-559
Author(s):  
L. Gerencsér

1997 ◽  
Vol 7 (C2) ◽  
pp. C2-619-C2-620 ◽  
Author(s):  
M. Giorgett ◽  
I. Ascone ◽  
M. Berrettoni ◽  
S. Zamponi ◽  
R. Marassi

1999 ◽  
Author(s):  
C. Joseph ◽  
D. Campbell ◽  
J. Suggs ◽  
J. Moore ◽  
N. Hartman
Keyword(s):  

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