Molecular Beam Epitaxial Growth and Photoluminescence Characterization of PbTe/CdTe Quantum Wells for Mid-Infrared Optical Devices

Kazuto KOIKE; Isao MAKABE; Mitsuaki YANO; Erich KAUFMANN; Wolfgang HEISS; Gunther SPRINGHOLZ; Michaela BÖBERL

doi:10.2472/jsms.53.1328

Molecular Beam Epitaxial Growth and Photoluminescence Characterization of PbTe/CdTe Quantum Wells for Mid-Infrared Optical Devices

Journal of the Society of Materials Science Japan ◽

10.2472/jsms.53.1328 ◽

2004 ◽

Vol 53 (12) ◽

pp. 1328-1333

Author(s):

Kazuto KOIKE ◽

Isao MAKABE ◽

Mitsuaki YANO ◽

Erich KAUFMANN ◽

Wolfgang HEISS ◽

...

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Molecular Beam ◽

Optical Devices ◽

Mid Infrared ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained‐layer single quantum wells and superlattices on GaAs substrates

Journal of Applied Physics ◽

10.1063/1.352005 ◽

1992 ◽

Vol 72 (11) ◽

pp. 5233-5239 ◽

Cited By ~ 50

Author(s):

Shizuo Fujita ◽

Yi‐hong Wu ◽

Yoichi Kawakami ◽

Shigeo Fujita

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Molecular Beam ◽

Single Quantum ◽

Strained Layer ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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Molecular-beam epitaxial growth and characterization of pseudomorphic InAs/In0.52Al0.48As quantum wells

Vacuum ◽

10.1016/0042-207x(89)90896-8 ◽

1989 ◽

Vol 39 (10) ◽

pp. 990

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular-beam epitaxial growth and characterization of pseudomorphic InAs/In0.52Al0.48 As quantum wells

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584414 ◽

1988 ◽

Vol 6 (2) ◽

pp. 617 ◽

Cited By ~ 17

Author(s):

J. L. de Miguel

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and optical characterization of GaAs/AlxGa1−xAs quantum wells on nominally oriented (111)B GaAs substrates

Applied Physics Letters ◽

10.1063/1.110422 ◽

1993 ◽

Vol 63 (19) ◽

pp. 2691-2693 ◽

Cited By ~ 5

Author(s):

B. J. García ◽

C. Fontaine ◽

A. Muñoz‐Yagüe

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Molecular Beam ◽

Optical Characterization ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and characterization of nitrogen δ-doped AlGaAs/GaAs quantum wells

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3678204 ◽

2012 ◽

Vol 30 (2) ◽

pp. 02B117 ◽

Cited By ~ 3

Author(s):

Shin-ichiro Furuse ◽

Kengo Sumiya ◽

Masato Morifuji ◽

Fumitaro Ishikawa

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular‐beam‐epitaxial growth and characterization of high‐quality alloys and multiple quantum wells on InP substrates using a post‐evaporation‐heated arsenic source

Journal of Applied Physics ◽

10.1063/1.357473 ◽

1994 ◽

Vol 76 (6) ◽

pp. 3429-3442 ◽

Cited By ~ 11

Author(s):

R. P. Leavitt ◽

J. L. Bradshaw

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Molecular Beam ◽

Multiple Quantum ◽

High Quality ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth ◽

Inp Substrates ◽

Arsenic Source

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Comparative study on the molecular beam epitaxial growth and characterization of AlGaN nanowire structures on AlN buffer layer and on Si

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/6.0000646 ◽

2020 ◽

Vol 38 (6) ◽

pp. 062804

Author(s):

Jiaying Lu ◽

Yun Zhong ◽

Songrui Zhao

Keyword(s):

Comparative Study ◽

Epitaxial Growth ◽

Buffer Layer ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Aln Buffer ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and optical characterization of AlGaN nanowires with reduced substrate temperature

AIP Advances ◽

10.1063/1.5140572 ◽

2020 ◽

Vol 10 (2) ◽

pp. 025022 ◽

Cited By ~ 4

Author(s):

Y. Zhong ◽

E. Berikaa ◽

J. Lu ◽

X. Yin ◽

S. Zhao

Keyword(s):

Substrate Temperature ◽

Epitaxial Growth ◽

Molecular Beam ◽

Optical Characterization ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and characterization of CoAl on AlAs/GaAs

Applied Physics Letters ◽

10.1063/1.105756 ◽

1991 ◽

Vol 59 (24) ◽

pp. 3115-3117 ◽

Cited By ~ 4

Author(s):

M. Tanaka ◽

H. Sakakibara ◽

T. Nishinaga

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular-beam epitaxial growth and characterization of GaAs on epitaxial CoSi2 films on Si(111)

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584397 ◽

1988 ◽

Vol 6 (2) ◽

pp. 703 ◽

Cited By ~ 7

Author(s):

N. Chand

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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