Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

Abstract A conductive boron-doped diamond (BDD) grown on a fused silica/quartz has been investigated. Diamond thin films were deposited by the microwave plasma enhanced chemical vapor deposition (MW PECVD). The main parameters of the BDD synthesis, i.e. the methane admixture and the substrate temperature were investigated in detail. Preliminary studies of optical properties were performed to qualify an optimal CVD synthesis and film parameters for optical sensing applications. The SEM micro-images showed the homogenous, continuous and polycrystalline surface morphology; the mean grain size was within the range of 100-250 nm. The fabricated conductive boron-doped diamond thin films displayed the resistivity below 500 mOhm cm-1 and the transmittance over 50% in the VIS-NIR wavelength range. The studies of optical constants were performed using the spectroscopic ellipsometry for the wavelength range between 260 and 820 nm. A detailed error analysis of the ellipsometric system and optical modelling estimation has been provided. The refractive index values at the 550 nm wavelength were high and varied between 2.24 and 2.35 depending on the percentage content of methane and the temperature of deposition.

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Field emission investigation of boron doped diamond thin films synthesized by microwave plasma chemical vapor deposition: Effect of vacuum annealing

2009 22nd International Vacuum Nanoelectronics Conference ◽

10.1109/ivnc.2009.5271662 ◽

2009 ◽

Author(s):

P.M. Koinkar ◽

D. Yonekura ◽

T.G. Kim ◽

M. A. More ◽

R. Murakami

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Microwave Plasma ◽

Vacuum Annealing ◽

Chemical Vapor ◽

Plasma Chemical ◽

Boron Doped Diamond ◽

Plasma Chemical Vapor Deposition ◽

Boron Doped ◽

Deposition Effect

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Electrical properties of homoepitaxial boron-doped diamond thin films grown by chemical vapor deposition using trimethylboron as dopant

Diamond and Related Materials ◽

10.1016/s0925-9635(98)00323-9 ◽

1999 ◽

Vol 8 (1) ◽

pp. 42-47 ◽

Cited By ~ 6

Author(s):

Shigeharu Morooka ◽

Terumi Fukui ◽

Kiyohiko Semoto ◽

Toshiki Tsubota ◽

Takeyasu Saito ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Boron Doped Diamond ◽

Boron Doped ◽

Diamond Thin Films

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Preparation and Characterization of Polycrystalline Chemical Vapor Deposited Boron-doped Diamond Thin Films

Diamond Electrochemistry ◽

10.1016/b978-044451908-5/50004-8 ◽

2005 ◽

pp. 11-25 ◽

Cited By ~ 4

Author(s):

T IVANDINI ◽

Y EINAGA ◽

K HONDA ◽

A FUJISHIMA

Keyword(s):

Thin Films ◽

Chemical Vapor ◽

Boron Doped Diamond ◽

Boron Doped ◽

Chemical Vapor Deposited ◽

Diamond Thin Films

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Growth behavior of boron-doped diamond in microwave plasma-assisted chemical vapor deposition using trimethylboron as the dopant source

Diamond and Related Materials ◽

10.1016/s0925-9635(98)80001-0 ◽

1998 ◽

Vol 7 (1) ◽

pp. 88-95 ◽

Cited By ~ 18

Author(s):

Hideaki Maeda ◽

Kyo Ohtsubo ◽

Masanori Kameta ◽

Takeyasu Saito ◽

Katsuki Kusakabe ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Plasma ◽

Chemical Vapor ◽

Growth Behavior ◽

Boron Doped Diamond ◽

Boron Doped ◽

Dopant Source

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Formation of Nitrogen-Vacancy Centers in Homoepitaxial Diamond Thin Films Grown via Microwave Plasma-Assisted Chemical Vapor Deposition

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2016.2528678 ◽

2016 ◽

Vol 15 (4) ◽

pp. 614-618 ◽

Cited By ~ 3

Author(s):

Hideyuki Watanabe ◽

Hitoshi Umezawa ◽

Toyofumi Ishikawa ◽

Kazuki Kaneko ◽

Shinichi Shikata ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Plasma ◽

Chemical Vapor ◽

Nitrogen Vacancy ◽

Nitrogen Vacancy Centers ◽

Diamond Thin Films

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Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-423-655 ◽

1996 ◽

Vol 423 ◽

Author(s):

S. Mirzakuchaki ◽

H. Golestanian ◽

E. J. Charlson ◽

T. Stacy

Keyword(s):

Thin Films ◽

Activation Energy ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Polycrystalline Diamond ◽

Silicon Substrates ◽

Boron Doped Diamond ◽

Diamond Thin Films ◽

Hot Filament

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

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Selective and low temperature synthesis of polycrystalline diamond

Journal of Materials Research ◽

10.1557/jmr.1991.1278 ◽

1991 ◽

Vol 6 (6) ◽

pp. 1278-1286 ◽

Cited By ~ 60

Author(s):

R. Ramesham ◽

T. Roppel ◽

C. Ellis ◽

D.A. Jaworske ◽

W. Baugh

Keyword(s):

Thin Films ◽

Low Temperature ◽

Substrate Temperature ◽

Microwave Plasma ◽

Diamond Particle ◽

Single Crystal Silicon ◽

Chemical Vapor ◽

Polycrystalline Diamond ◽

Crystal Silicon ◽

Diamond Thin Films

Polycrystalline diamond thin films have been deposited on single crystal silicon substrates at low temperatures (⋚ 600 °C) using a mixture of hydrogen and methane gases by high pressure microwave plasma-assisted chemical vapor deposition. Low temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 °C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

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