Preparation and Characterization of Polycrystalline Chemical Vapor Deposited Boron-doped Diamond Thin Films

AbstractHot-filament chemical vapor deposited (HFCVD) boron doped polycrystalline diamond thin films having low volume resistivity were grown on sapphire. The films were characterized using scanning electron microscope (SEM), X-ray diffraction, and current-voltage measurements. SEM micrographs show good crystalline structure with preferred (100) orientation normal to the surface of the film. X-ray diffraction pattern revealed diamond characteristics with the four typical diamond peaks present. Finally, the obtained I-V characteristics indicated that the film's volume resistivity is at least two orders of magnitude lower than those of HFCVD polycrystalline diamond thin films grown on silicon under similar growth conditions.

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Electrical properties of homoepitaxial boron-doped diamond thin films grown by chemical vapor deposition using trimethylboron as dopant

Diamond and Related Materials ◽

10.1016/s0925-9635(98)00323-9 ◽

1999 ◽

Vol 8 (1) ◽

pp. 42-47 ◽

Cited By ~ 6

Author(s):

Shigeharu Morooka ◽

Terumi Fukui ◽

Kiyohiko Semoto ◽

Toshiki Tsubota ◽

Takeyasu Saito ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Boron Doped Diamond ◽

Boron Doped ◽

Diamond Thin Films

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Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

Metrology and Measurement Systems ◽

10.2478/mms-2014-0059 ◽

2014 ◽

Vol 21 (4) ◽

pp. 685-698 ◽

Cited By ~ 24

Author(s):

Robert Bogdanowicz

Keyword(s):

Thin Films ◽

Wavelength Range ◽

Microwave Plasma ◽

Chemical Vapor ◽

Fused Silica ◽

Boron Doped Diamond ◽

Sensing Applications ◽

Boron Doped ◽

Mean Grain Size ◽

Diamond Thin Films

Abstract A conductive boron-doped diamond (BDD) grown on a fused silica/quartz has been investigated. Diamond thin films were deposited by the microwave plasma enhanced chemical vapor deposition (MW PECVD). The main parameters of the BDD synthesis, i.e. the methane admixture and the substrate temperature were investigated in detail. Preliminary studies of optical properties were performed to qualify an optimal CVD synthesis and film parameters for optical sensing applications. The SEM micro-images showed the homogenous, continuous and polycrystalline surface morphology; the mean grain size was within the range of 100-250 nm. The fabricated conductive boron-doped diamond thin films displayed the resistivity below 500 mOhm cm-1 and the transmittance over 50% in the VIS-NIR wavelength range. The studies of optical constants were performed using the spectroscopic ellipsometry for the wavelength range between 260 and 820 nm. A detailed error analysis of the ellipsometric system and optical modelling estimation has been provided. The refractive index values at the 550 nm wavelength were high and varied between 2.24 and 2.35 depending on the percentage content of methane and the temperature of deposition.

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Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-423-655 ◽

1996 ◽

Vol 423 ◽

Author(s):

S. Mirzakuchaki ◽

H. Golestanian ◽

E. J. Charlson ◽

T. Stacy

Keyword(s):

Thin Films ◽

Activation Energy ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Polycrystalline Diamond ◽

Silicon Substrates ◽

Boron Doped Diamond ◽

Diamond Thin Films ◽

Hot Filament

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

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Characterization of chemical-vapor-deposited low-k thin films using x-ray porosimetry

Applied Physics Letters ◽

10.1063/1.1553996 ◽

2003 ◽

Vol 82 (7) ◽

pp. 1084-1086 ◽

Cited By ~ 16

Author(s):

Hae-Jeong Lee ◽

Eric K. Lin ◽

Barry J. Bauer ◽

Wen-li Wu ◽

Byung Keun Hwang ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor ◽

X Ray ◽

Chemical Vapor Deposited ◽

Low K

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Influence of Carbon Source Concentration on Characterization of Boron-Doped Diamond Electrodes

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.204-210.1691 ◽

2011 ◽

Vol 204-210 ◽

pp. 1691-1696

Author(s):

Yu Qiang Chen ◽

Jiang Wei Lv ◽

Hong Wei Jiang ◽

Hong Yan Peng ◽

Yu Jie Feng ◽

...

Keyword(s):

Carbon Source ◽

Phenol Degradation ◽

Chemical Vapor ◽

Crystalline Lattice ◽

Boron Doped Diamond ◽

Graphite Phase ◽

Substitutional Site ◽

Boron Doped ◽

Source Concentration

A set of boron-doped diamond (BDD) electrodes were deposited on silicon substrates by direct current plasma chemical vapor deposition (DC-PCVD) system using different carbon source concentrations. The influence of carbon source concentration on characterization of BDD electrodes was investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy and phenol degradation. It was found that BDD films with different carbon source concentrations were polycrystalline films with (111) dominant orientation. The films grew well when carbon source concentration was less than 2.5%, while graphite phase began to form when carbon source concentration was increased to 3%. Boron atoms were located at the substitutional site or interstitial sites in the crystalline lattice of diamond films, and didn’t damage the structure of diamond crystal. Within 4 h, 100 mg/L phenol solution in 80 ml could be oxidized by all the electrodes with removal efficiency higher than 90%.

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