scholarly journals Resists Using the Absorption Band Shift Method for ArF Excimer Laser Lithography.

1998 ◽  
Vol 11 (3) ◽  
pp. 489-492
Author(s):  
Takeshi Okino ◽  
Koji Asakawa ◽  
Naomi Shida ◽  
Tohru Ushirogouchi
Keyword(s):  
Absorption Band ◽  
Excimer Laser ◽  
Band Shift ◽  
Shift Method ◽  
Laser Lithography ◽  
Arf Excimer Laser

Chemically ampilified ArF excimer laser resists using the absorption band shift method

1995 ◽  
Author(s):  
Makoto Nakase ◽  
Takuya Naito ◽  
Koji Asakawa ◽  
Akinori Hongu ◽  
Naomi Shida ◽  
...  
Keyword(s):  
Absorption Band ◽  
Excimer Laser ◽  
Band Shift ◽  
Shift Method ◽  
Arf Excimer Laser

Highly Transparent Chemically Amplified ArF Excimer Laser Resists by Absorption Band Shift for 193 nm Wavelength

1994 ◽  
Vol 33 (Part 1, No. 12B) ◽  
pp. 7028-7032 ◽  
Author(s):  
Takuya Naito ◽  
Koji Asakawa ◽  
Naomi Shida ◽  
Tohru Ushirogouchi ◽  
Makoto Nakase
Keyword(s):  
Absorption Band ◽  
Excimer Laser ◽  
Band Shift ◽  
Chemically Amplified ◽  
Arf Excimer Laser ◽  
193 Nm

Modification of Fused Silica Materials for Excimer Laser Optics—measurement of laser induced defects and its reformation—

1992 ◽  
Vol 279 ◽  
Author(s):  
Yasutaka Matsumoto ◽  
Yoshihiro Yoshikado ◽  
Masataka Murahara
Keyword(s):  
Absorption Band ◽  
Excimer Laser ◽  
Laser Processing ◽  
Fused Silica ◽  
Laser Lithography ◽  
Silica Materials ◽  
Laser Optics ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Induced Defects

ABSTRACTFused silica is widely used material in window and lens applications for excimer laser processing. The transmittance of the laser beam in fused silica is attenuated approximately 40% by high fluence ArF excimer laser irradiation. The attenuation of the transmittance corresponds to the growth of an absorption band at 215nm. This phenomenon is troublesome for laser lithography. To investigate this effect, we examined the laser induced luminescence and absorption under various conditions. The 215nm absorption band was diminished by annealing at 900 °C for 2 hours in He ambient. Ke could successfully obtain good optical material, whose transmittance remains constant with increasing ArF laser(193nm) shot exposure.

ArF excimer laser lithography with bottom antireflective coating

1998 ◽  
Author(s):  
Shinji Kishimura ◽  
Makoto Takahashi ◽  
Keisuke Nakazawa ◽  
Takeshi Ohfuji ◽  
Masaru Sasago ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Antireflective Coating ◽  
Laser Lithography ◽  
Arf Excimer Laser

Dissolution behavior of alicyclic polymers designed for ArF excimer laser lithography

1996 ◽  
Author(s):  
Takeshi Ohfuji ◽  
Katsumi Maeda ◽  
Kaichiro Nakano ◽  
Etsuo Hasegawa
Keyword(s):  
Excimer Laser ◽  
Dissolution Behavior ◽  
Laser Lithography ◽  
Arf Excimer Laser
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