Enhanced Long-Term Reliability of Seal DeltaSpot Welded Dissimilar Joint between 6061 Aluminum Alloy and Galvannealed Steel via Excimer Laser Irradiation

Structural-adhesive-assisted DeltaSpot welding was used to improve the weldability and mechanical properties of dissimilar joints between 6061 aluminum alloy and galvannealed HSLA steel. Evaluation of the spot-weld-bonded surfaces from lap shear tests after long-term exposure to chloride and a humid atmosphere (5% NaCl, 35 °C) indicated that the long-term mechanical reliability of the dissimilar weld in a corrosive environment depends strongly on the adhesive–Al6061 alloy bond strength. Corrosive electrolyte infiltrated the epoxy-based adhesive/Al alloy interface, disrupting the chemical interactions and decreasing the adhesion via anodic undercutting of the Al alloy. Due to localized electrochemical galvanic reactions, the surrounding nugget matrix suffered accelerated anodic dissolution, resulting in an Al6061-T6 alloy plate with degraded adhesive strength and mechanical properties. KrF excimer laser irradiation of the Al alloy before adhesive bonding removed the weakly bonded native oxidic overlayers and altered the substrate topography. This afforded a low electrolyte permeability and prevented adhesive delamination, thereby enhancing the long-term stability of the chemical interactions between the adhesive and Al alloy substrate. The results demonstrate the application of excimer laser irradiation as a simple and environmentally friendly processing technology for robust adhesion and reliable bonding between 6061 aluminum alloy and galvannealed steel.

Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation

The effect of KrF excimer laser irradiation on the optical and electrical properties of epitaxial wafers with a p-GaN surface were investigated at different laser energy densities and pulse numbers. The laser-irradiated samples were annealed in oxygen. The laser irradiation-induced changes in optical and electrical properties of GaN epitaxial wafers were examined using PL, I–V, XPS, SIMS, and Hall effect measurements. Experimental results show that under an appropriate laser-irradiated condition, optical and electrical properties of the samples were improved to different degrees. The samples which were annealed after laser irradiation have better electrical properties such as the hole concentration and sheet resistance than those without annealing. We hypothesize that the pulsed KrF excimer laser irradiation dissociates the Mg–H complexes and annealing treatment allows the hydrogen to diffuse out more completely under the oxygen atmosphere at a proper temperature, by which the crystalline symmetry of GaN is improved. Under appropriate laser conditions and O2-activated annealing, the light output of the laser-irradiated GaN-based LED sample is about 1.44 times that of a conventional LED at 20 mA. It is found that the wall-plug efficiency is 10% higher at 20 mA and the reverse leakage current is 80% lower at 5 V.