Spectra and Kinetics of Emission in Polycrystalline Er2O3 under Pulsed Laser-Thermal Excitation

2021 ◽  
Vol 29 (4) ◽  
pp. 293-298
Author(s):  
V. M. Marchenko

2017 ◽  
Vol 84 (5) ◽  
pp. 751-756
Author(s):  
V. M. Marchenko ◽  
M. A. Melkumov ◽  
Yu. A. Shakir


2019 ◽  
Vol 27 (9) ◽  
pp. 1937-1947
Author(s):  
Huanbo Cheng ◽  
Yu Sun ◽  
Ziqiang Zhou ◽  
Jie Zhang ◽  
Xin Wang ◽  
...  


1990 ◽  
Author(s):  
Alexei L. Bogdanov ◽  
V. A. Nikitaev ◽  
Andrey B. Poljakov ◽  
V. E. Tukish ◽  
Kamil A. Valiev ◽  
...  


2019 ◽  
Vol 33 (1) ◽  
pp. 205-212 ◽  
Author(s):  
Gertjan Koster ◽  
Dave H. A. Blank ◽  
Guus A. J. H. M. Rijnders

Abstract For thin film synthesis of complex oxides, one of the most important issues has always been how to oxidise the material. For a technique like pulsed laser deposition, a key benefit is the relatively high oxygen background pressure one can operate at, and therefor oxidation should be relatively straightforward. However, understanding the microscopic oxidation mechanisms turns out to be rather difficult. In this perspective, we give a brief overview of the sources of oxidation for complex oxide thin films grown by pulsed laser deposition. While it is clear what these sources are, their role in the kinetics of the formation of the crystal structure and oxygen stoichiometry is not fully understood.



Nature ◽  
1985 ◽  
Vol 313 (5998) ◽  
pp. 100-100 ◽  
Author(s):  
Ian W. Boyd ◽  
Steven C. Moss


1992 ◽  
Vol 280 ◽  
Author(s):  
Kazuhiro Karahashi ◽  
Jiro Matsuo ◽  
Kei Horiuchi

ABSTRACTThe interaction of atomic chlorine with Si(100)2×1 surfaces was studied by using chlorine atom beams. The etching reaction of silicon substrates has been observed when chlorine atoms impinged on the chlorinated surface, at substrate temperatures below 600°C. The major desorption product is SiCl2. Studies of the temperature dependence of the reaction showed that the activation energy are 0.08 eV at 0.4 ML and 0.2 eV at 0.8 ML. These extremely low activation energies suggest that the surface reaction is mainly driven by the internal energy of incident atomic chlorine instead of thermal excitation from Si(100) solid surface. Therefore chlorine atoms enter the transition state without equilibrating at the surface prior to the reaction. The reaction strongly depends on the chlorine coverage on the surface. The reaction occurred above 0.3 ML. The etching probability of the surface reached a maximum at 0.4 ML, and decreased with increasing coverage.







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