scholarly journals THE MEASUREMENT OF THE RING TYPE SETTLEMENT IN JOMON-PERIOD : Spatial indexes of the settlement in Jomon-period around Kanto district : Part I

1996 ◽  
Vol 61 (487) ◽  
pp. 195-201 ◽  
Author(s):  
Tadashige TAKASE
Keyword(s):  
Ring Type ◽  
Type Settlement ◽  
Kanto District ◽  
Spatial Indexes

Risk predictors of arterial hypertension development in population of Mountain Shoriya of various ethnical origins

2019 ◽  
Vol 1 (3) ◽  
pp. 39-42
Author(s):  
T. A. Mulerova ◽  
M. Yu. Ogarkov ◽  
O. L. Barbarash
Keyword(s):  
Cardiovascular Diseases ◽  
Total Cholesterol ◽  
Low Density Lipoprotein ◽  
Density Lipoprotein ◽  
Low Density Lipoprotein Cholesterol ◽  
Type Settlement ◽  
The Family ◽  
Genotype C ◽  
Hypertension Development ◽  
Risk Predictors

1409 people (901 Shors, 508 non-indigenous people) from remote villages of Mountain Shoriya (Orton and Ust-Kabyrsa) and urban-type settlement Sheregesh took part in the survey. In Shors, the risk of developing hypertension was determined by elevated levels of total cholesterol and low density lipoprotein cholesterol, violation of carbohydrate metabolism, obesity, including its abdominal type, the family anamnesis of early cardiovascular diseases, and a carriage of prognostically unfavorable genotypes D/D and C/C of the corresponding genes ACE and AGTR 1 candidates; in the cohort of non-indigenous ethnos-elevated levels of total cholesterol and triglycerides, obesity, abdominal obesity, the family anamnesis of early cardiovascular diseases, a carrier of the minor genotype C/C of the AGTR 1 gene

Nano Probe Analysis of Device Characteristics Affected by Ring Type Crystalline Defect

2011 ◽  
Author(s):  
Jong Hak Lee ◽  
Yu Jun Lee ◽  
Jung Sam Kim ◽  
Seo Kyung Jeong ◽  
Min Su Kim ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Physical Method ◽  
Hybrid Analysis ◽  
Electrical Method ◽  
Ring Type ◽  
Crystalline Defects ◽  
Address Data ◽  
Signal Input ◽  
Crystalline Defect ◽  
Top View

Abstract In this work, crystalline defects (dislocations) occurred in the silicon substrate during annealing SOD (Spin On Dielectric) which is an easy choice for its superior STI gap-fill ability. The reversal of address data that share same SIO (Signal Input Out) line in a DQ arises from crystalline defects. The failure analysis of physical methods has difficulty finding minute defects within the active because it is scarcely detectable from the top view. Situation can be well understood by electrical analysis using the nano probe. Due to its ability to probing contact nodes around the fail area, a ring type crystalline defect which is hardly detected from the top view was effectively analyzed by 3D TEM with the assistance of nano probe. This work shows that hybrid analysis of electrical method by nano probe and physical method by 3D TEM is useful and effective in failure analysis in semiconductor.

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