scholarly journals Improved dielectric performance of barium strontium titanate multilayered capacitor by means of pulsed laser deposition and slow injection sol–gel methods

2014 ◽  
Vol 105 (5) ◽  
pp. 480-486
Author(s):  
Ruthramurthy Balachandran ◽  
Ong Hoong ◽  
Wong Yong ◽  
Tan Ban ◽  
Yow Kwang ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Barium Strontium ◽  
Dielectric Performance ◽  
Slow Injection

Low Temperature Growth Of Barium Strontium Titanate Films By Ultraviolet-Assisted Pulsed Laser Deposition

2000 ◽  
Vol 617 ◽  
Author(s):  
V. Craciun ◽  
J. M. Howard ◽  
E. S. Lambers ◽  
R. K. Singh
Keyword(s):  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Photoelectron Spectroscopy ◽  
Perovskite Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Flat Band ◽  
Si Substrates ◽  
Barium Strontium

AbstractBarium strontium titanate (BST) thin films were grown directly on Si substrates by an in situ ultraviolet (UV)-assisted pulsed laser deposition (UVPLD) technique. With respect to films grown by conventional (i.e. without UV illumination) pulsed laser deposition (PLD), the UVPLD grown films exhibited improved structural and electrical properties. The dielectric constant of a 40-nm thick film deposited at 650 °C was determined to be 281, the leakage current density was approximately 4×10−8 A/cm2at 100 kV/cm, and the density of interface states at the flat-band voltage was found to be approximately 5.6×1011 eV−1 cm−2 X-ray photoelectron spectroscopy investigations found that the surface of the grown films exhibited an additional Ba-containing phase, besides the usual BST perovskite phase, which was likely caused by stress and/or oxygen vacancies. The amount of this new phase was always smaller and very superficial for UVPLD grown films, which can explain their better overall properties.

Effect of Laser Energy and Laser Pulses on the Microstructure, Composition and Properties of Barium Strontium Titanate Thin Films Synthesized by Pulsed Laser Deposition

2000 ◽  
Vol 656 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
J. D. Demaree ◽  
Steven H. Mcknight
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zone Model ◽  
Barium Strontium

ABSTRACTBarium strontium titanate (BSTO) films were synthesized by the pulsed laser deposition technique (PLD) on silicon substrates at room temperature. The thin films were synthesized at ambient temperature and 30 mT oxygen partial pressure, with 300, 400 and 500 mJ/cm2 laser fluence at 5, 10 and 20 pulses per second on silicon wafer substrates. All films were subsequently post-annealed at 750°C in a continuous oxygen stream. The microstructure, crystallinity and lattice constant of the BSTO films were studied with the aid of atomic force microscopy (FEM) and Glancing Angle X-ray Diffraction analysis (GAXRD). The hardness and modulus of elasticity of the films were studied with the aid of a nanohardness indenter. The film stoichiometry was determined with the aid of Rutherford Backscattering Spectrometry (RBS). The results of this research will be combined with the results of our previous work [1, 2] on the effect of substrate temperature and oxygen partial pressure on the microstructure and properties of the BSTO films in order to construct a structural zone model (SZM) of the BSTO films synthesized by PLD.

Effect of Laser Energy and Laser Pulses on the Microstructure, Composition and Properties of Barium Strontium Titanate Thin Films Synthesized by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
J. D. Demaree ◽  
Steven H. McKnight
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zone Model ◽  
Barium Strontium

AbstractBarium strontium titanate (BSTO) films were synthesized by the pulsed laser deposition technique (PLD) on silicon substrates at room temperature. The thin films were synthesized at ambient temperature and 30 mT oxygen partial pressure, with 300, 400 and 500 mJ/cm2 laser fluence at 5, 10 and 20 pulses per second on silicon wafer substrates. All films were subsequently post-annealed at 750°C in an continuous oxygen stream. The microstructure, crystallinity and lattice constant of the BSTO films were studied with the aid of atomic force microscopy (FEM) and Glancing Angle X-ray Diffraction analysis (GAXRD). The hardness and modulus of elasticity of the films were studied with the aid of a nanohardness indenter. The film stoichiometry was determined with the aid of Rutherford Backscattering Spectrometry (RBS). The results of this research will be combined with the results of our previous work [1, 2] on the effect of substrate temperature and oxygen partial pressure on the microstructure and properties of the BSTO films in order to construct a structural zone model (SZM) of the BSTO films synthesized by PLD.

Effect of the Oxygen Partial Pressure on the Microstructure and Properties of Barium Strontium Titanate Thin Films Synthesized by Pulsed Laser Deposition

1999 ◽  
Vol 603 ◽  
Author(s):  
C.G. Fountzoulas ◽  
C. W. Hubbard ◽  
Eric H. Ngo ◽  
J. D. Kleinmeyer ◽  
J. D. Demaree ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zone Model ◽  
Tunneling Microscopy ◽  
Rutherford Back Scattering ◽  
Barium Strontium

AbstractBarium strontium titanate (BSTO) films were synthesized by the pulsed laser deposition technique (PLD) on silicon substrates at room temperature. The BSTO film synthesis took place at constant laser energy, 500 mJ, and partial oxygen pressure of 3, 15, 30, 45, 100 mTorr. All films were post annealed at 750 °C in a tube furnace in an oxygen atmosphere. The microstructure, crystallinity and lattice constant of the BSTO films were studied with the aid of scanning electron microscopy (SEM), photon tunneling microscopy (PTM) and Glancing Angle X-ray Diffraction analysis (GAXRD). The hardness and modulus of elasticity of the films were studied with the aid of a nanohardness indenter. The film stoichiometry was determined with the aid of Rutherford Back Scattering (RBS). The results of this research will be combined with the results of our previous work [1] on the effect of substrate temperature on the microstructure and mechanical properties of the BSTO films in order to construct a structural zone model (SZM) of the BSTO films synthesized by PLD.

Ultraviolet-Assisted Pulsed Laser Deposition of Barium Strontium Titanate on Si: Characterization of the Interfacial Layer

2002 ◽  
Vol 718 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
N. D. Bassim ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Silicate Formation ◽  
Barium Strontium

AbstractBarium strontium titanate (BST) thin films were grown directly on Si substrates by the conventional and ultraviolet-assisted pulsed laser deposition techniques. X-ray photoelectron spectroscopy, x-ray diffraction and reflectivity, variable angle spectroscopic ellipsometry, current-voltage, capacitance-voltage, and high-resolution transmission electron microscopy were used to investigate the composition, thickness, and electrical properties of the grown structures. It has been found that at the interface between the Si substrate and the grown dielectric layer, an interfacial layer was always formed. The chemical composition of the layer consisted of SiOx partially mixed with the grown BST, without any evidence of silicate formation.

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