scholarly journals FLATTENING OF A SCRATCH ON SINGLE CRYSTAL ICE SURFACE

Anales AFA ◽  
2020 ◽  
Vol 31 (3) ◽  
pp. 86-92
Author(s):  
G. Aguirre Varela ◽  
◽  
D. Stoler Flores ◽  
P.I. Achával ◽  
C.L. Di Prinzio
Keyword(s):  
Diffusion Coefficient ◽  
Single Crystal ◽  
Surface Diffusion ◽  
Silica Gel ◽  
Three Dimensional ◽  
Confocal Microscope ◽  
Surface Diffusion Coefficient ◽  
Diffusion Transport ◽  
Ice Surface ◽  
Activated Silica Gel

The surface of a monocrystalline ice sample was observed at −5 ◦C (268 K). For which it was superficially polished and allowed to evolve in the presence of activated silica gel for three hours. The evolution of a depression was studied using three-dimensional micrographs obtained with an Olympus OLS4000 LEXT confocal microscope. A predominance of surface diffusion transport was found in the evolution of the depression. This is based both on the value obtained for the surface diffusion coefficient, as well as on the values found for the exponents corresponding to the evolution of the depth of the well and its width.

Cesium diffusion at a tungsten surface

1969 ◽  
Vol 47 (6) ◽  
pp. 657-663 ◽  
Author(s):  
H. M. Love ◽  
H. D. Wiederick
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficient ◽  
Single Crystal ◽  
Surface Diffusion ◽  
Diffusion Processes ◽  
Bulk Diffusion ◽  
Photoelectric Method ◽  
Surface Diffusion Coefficient ◽  
Tungsten Surface ◽  
The Mean

The diffusion of cesium at the surface of tungsten ribbons has been measured under ultrahigh vacuum conditions. A photoelectric method was used to determine the cesium surface concentrations which were in the range from about 5 × 10−4 to 2 × 10−2 monolayers. The measured changes in concentration with time and temperature were consistent, for a polycrystalline ribbon, with two bulk diffusion processes with activation energies of 1.7 ± 0.3 eV and 0.17 ± 0.03 eV. For a single crystal, it was found that limited bulk diffusion occurred with an activation energy of 0.21 ± 0.02 eV. The mean surface diffusion coefficient for cesium on a (110) tungsten surface over the temperature range from 550 °K to 850 °K was given by D = (0.23 ± 0.10 cm2 s−1) exp [−(0.57 ± 0.02 eV)/kT].

Reduction of the Defect Density in a-Si:H Deposited at ≤250°C

1993 ◽  
Vol 297 ◽  
Author(s):  
Hitoshi Nishio ◽  
Gautam Ganguly ◽  
Akihisa Matsuda
Keyword(s):  
Diffusion Coefficient ◽  
Amorphous Silicon ◽  
Surface Diffusion ◽  
Film Growth ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Device Fabrication ◽  
Surface Diffusion Coefficient ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

We present a method to reduce the defect density in hydrogenated amorphous silicon (a-Si:H) deposited at low substrate temperatures similar to those used for device fabrication . Film-growth precursors are energized by a heated mesh to enhance their surface diffusion coefficient and this enables them to saturate more surface dangling bonds.

Temperature dependence of the surface diffusion coefficient of K atoms on Pd{111} measured with PEEM

1996 ◽  
Vol 352-354 ◽  
pp. 546-551 ◽  
Author(s):  
M. Šnábl ◽  
M. Ondřejček ◽  
V. Cháb ◽  
W. Stenzel ◽  
H. Conrad ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Temperature Dependence ◽  
Surface Diffusion ◽  
Surface Diffusion Coefficient

scholarly journals The surface diffusion coefficient of Al2O3 obtained by free sintering.

1977 ◽  
Vol 85 (980) ◽  
pp. 185-189 ◽  
Author(s):  
Wazo KOMATSU ◽  
Yusuke MORIYOSHI ◽  
S. K. MOON ◽  
Hideaki KAMATA ◽  
Shigeyuki KURASHIMA
Keyword(s):  
Diffusion Coefficient ◽  
Surface Diffusion ◽  
Surface Diffusion Coefficient

Ice-surface properties analyzed through grain-boundary migration

2003 ◽  
Vol 81 (1-2) ◽  
pp. 285-291 ◽  
Author(s):  
O B Nasello ◽  
C L Di Prinzio
Keyword(s):  
Diffusion Coefficient ◽  
Grain Boundary ◽  
Boundary Migration ◽  
Coincidence Site Lattice ◽  
Grain Boundary Migration ◽  
Site Lattice ◽  
Surface Diffusion Coefficient ◽  
Ice Surface ◽  
Factors Influencing ◽  
Experimental Values

One of the factors influencing the movement of grain boundaries is the groove formed at the intersection between the grain boundary (GB) and the free surface of the sample. The equations that describe this interaction show that it is possible to obtain values for the GB mobility M and the surface diffusion coefficient D by studying the GB movement, provided that the variation of GB energy with inclination is known. In the present work, GB movement under the influence of the surface is studied for pure bicrystalline ice samples. The bicrystals used in the study presented a [Formula: see text]10[Formula: see text]0[Formula: see text]/60° crystalline misorientation, and different inclinations. Experimental values of M and D with a dispersion of less than 50% were obtained modeling the variation of GB energy with inclination and by taking into account Coincidence Site Lattice concepts. PACS No.: 68.35-p

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